Nippondenso Co., Ltd.

Kouji Numazaki

Mitsuhiro Saitou

Takahisa Koyasu

Hirokazu Kasuya

Hiroyuki Ban

Kazuhisa Ikeda

A semiconductor package, which secures the protection of circuit elements from the external environment, is disclosed. A single in-line package (SIP) is constructed by fixingly sealing a hybrid integrated circuit component within a casing with epoxy resin. A sleeve is bonded on the surface of a ceramic substrate. The sleeve is formed with silicon rubber into a pocket shape so as to cover respective circuit elements of the hybrid integrated circuit component. In the sleeve is made an opening part. Silicon gel is poured into the sleeve as a fixingly sealing material and cured to seal the respective circuit elements. Terminals downwardly extends in parallel with each other from an end part of the ceramic substrate through an opening part of the casing.

Semiconductor package with pocket for sealing material

A semiconductor wafer, having a relatively wide power supply line and ground line, and which can also prevent short-circuiting between these lines. Multiple integrated circuit formation regions, whereon integrated circuits have been formed, are disposed on a semiconductor wafer. A silicon oxide film is formed on a silicon substrate, and a ground line conductor is formed on the silicon oxide film. This ground line conductor is extended over scribe lines. A layer insulation film composed of silicon oxide film is deposited on the silicon oxide film with the ground line conductor interposed therebetween, and a power supply line conductor is formed on the layer insulation film to overlap the ground line conductor. The power supply line conductor is extended over scribe lines. In the integrated circuit formation regions, a power supply pad and the power supply line conductor are electrically connected. A ground pad and the ground line conductor are also electrically connected.

Semiconductor wafer

At least four electrodes are provided on the same surface of a discrete transistor. Among these electrodes, one electrode is set as a base electrode, an electrode neighboring the base electrode in the up-and-down direction is set as an emitter electrode and an electrode neighboring the base electrode in the right-and-left direction is set as a collector electrode. On the same surface, a base electrode is provided at a position which is neither in the up-and-down direction nor in the right-and-left direction with respect to the base electrode. When the discrete transistor having this type of electrode arrangement is mounted on a substrate, one of the base electrodes formed on the substrate is connected to a first wiring, the collector electrode is connected to a second wiring, and the emitter electrode is connected to a third wiring.

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Nukata-gun, Japan

Kouji Numazaki