Hitachi Chemical Company, Ltd.

Showa Denko Materials Co., Ltd.

Kouji Mishima

Masato Fukasawa

Masayuki Hanano

Naomi Watanabe

Kouji Haga

Takafumi Sakurada

Masaya Nishiyama

Hiroshi Nakagawa

Tomokazu Shimada

Masahiro Sakashita

A polishing agent containing abrasive grains and water, in which the abrasive grains contain silica particles, an average particle diameter Rof the abrasive grains is 50 nm or more, a ratio R/Rof the average particle diameter Rto an average minor diameter Rof the abrasive grains is 1.0 to 2.0, and a zeta potential of the abrasive grains in the polishing agent is positive.

Polishing agent, stock solution for polishing agent, and polishing method

An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential Eof cobalt and the corrosion potential Eof the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference E&#x2212;Ebetween the corrosion potential Eand the corrosion potential Eis 0&#x2dc;300 mV.

CMP polishing liquid and polishing method

The CMP polishing solution of the invention comprises (A) a metal corrosion inhibitor containing a compound with a 1,2,3-triazolo[4,5-b]pyridine skeleton, (B) an abrasive grain having a positive zeta potential in the CMP polishing solution, (C) a metal oxide solubilizer and (D) an oxidizing agent. The polishing method of the invention comprises a first polishing step in which the conductive substance layer of a substrate comprising an interlayer insulating filth having an elevated section and a trench at the surface, a barrier layer formed following the surface of the interlayer insulating film and the conductive substance layer formed covering the barrier layer, is polished to expose the barrier layer located on the elevated section of the interlayer insulating film, and a second polishing step in which the barrier layer exposed in the first polishing step is polished using the CMP polishing solution to expose the elevated section of the interlayer insulating film.

CMP polishing solution and polishing method

Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.

Polishing method

A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.

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Hitachi, Japan

Kouji Mishima