C.i. Kasei Company, Limited

Kouji Kudou

Hiroshi Fushimi

Kengo Nishiyama

Kazuma Mitsuyama

Itsuki Yamamoto

There are provided a vertical geometry light emitting diode package aggregate useful for the production of a light emitting device having a vertical geometry light emitting diode as the light source, the light emitting device satisfying requirements in terms of current capacity flowed for light emission, dissipation of heat generated due to flow of a large current, resistance to thermal stress, strength of device and light emission efficiency, and a method for producing a light emitting device having a vertical geometry light emitting diode as the light source by using the package aggregate. The vertical geometry light emitting diode package comprises a metal sheet having formed thereon a number of vertical geometry light emitting diode package units, each package unit comprising two or more substrate portions as a part of the metal sheet, which are separated by a slit, and a reflector having a penetrating opening and being adhered to the two or more substrate portions to cover parts of the slit such that the vertical geometry light emitting diode-mounting position is exposed in the inner side of the opening and at the same time, the end part of the slit is exposed in the outer side of the reflector.

Vertical geometry light emitting diode package aggregate and production method of light emitting device using the same

A light emitting device, and a production method thereof, is provided having for a light source thereof a vertical geometry light emitting diode, that allows a large current to flow through the vertical geometry light emitting diode and takes into consideration the dissipation of heat occurring at that time or the expansion and contraction of a metal member due to thermal stress caused by that heat. The light emitting device at least comprises a package having a plurality of mutually separated package electrodes; a vertical geometry light emitting diode having a light emitting layer positioned between a p-type semiconductor layer and an n-type semiconductor layer, an upper partial electrode of the uppermost layer, and a lower electrode of the lowermost layer, wherein the lower electrode is joined onto one of the package electrodes; and, a conductive connecting member that connects the upper electrode of the vertical geometry light emitting diode with another of package electrodes; wherein the junction between said one of the package electrodes and the lower electrode, the junction between the upper electrode and the conductive connecting member, and the junction between the conductive connecting member and said other of package electrodes are made with solder.

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Saga, Japan

Kouji Kudou