Shin-Etsu Handotai Co., Ltd.

Kouji Kitagawa

Eiichi Iino

Kouji Mizuishi

Izumi Fusegawa

Masanori Kimura

Hisashi Masumura

Hirotoshi Yamagishi

Masahiro Sakurada

Kiyotaka Takano

Masahiko Urano

Fumio Suzuki

Kenji Araki

A workpiece holder for polishing includes a workpiece holder body having multiple perforated holes to hold a workpiece by vacuum suction. A holding surface of the workpiece holder body may be coated with resin. A coefficient of thermal expansion of the resin coating on the holding surface may be 1&#xd7;10/K or less. The resin coating on the holding surface may be epoxy resin filled with silica particles.

Workpiece holder for polishing, workpiece polishing apparatus and polishing method

There are provided an apparatus for producing single crystals and a method for producing single crystals, which can absorb and eliminate vibration generated by a crucible rotation driving motor, or prevent transmission of the vibration to a melt, or attenuate the vibration in the production of single crystals by the CZ method. The apparatus for producing single crystals comprises a crucible for accommodating a raw material melt, a mechanism for pulling a crystal from the melt, a mechanism for rotating the crucible, and a transfer mechanism for vertically moving the crucible, wherein, in the rotation mechanism for the crucible, a ball spline is used for power transmission between a crucible-supporting shaft and a crucible rotation driving unit, and the crucible rotation driving unit is fixedly installed on a substructure of the apparatus for producing single crystals. Further, single crystals are produced by using the apparatus.

Apparatus for producing single crystals and method for producing single crystals

A method for producing a single crystal by pulling the single crystal with a wire according to the Czochralski method, wherein temperature around an end of joint part of the wire and a seed crystal holder is controlled so as not to exceed 1200&deg; C., preferably 800&deg; C., at any time, and material of the wire is one selected from tungsten, stainless steel and molybdenum, and a pulling apparatus therefor. According to the present invention, there can be provided a method in which temperature around an end of joint part of a wire and a seed crystal holder is controlled so as not to exceed a temperature at which material degradation of the wire begins during the period of from seeding to an early stage of the pulling, and a pulling apparatus therefor.

Method for producing single crystal and pulling device

A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

Device for producing a single crystal

A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.

Growing community of inventors

Fukushima, Japan

Kouji Kitagawa