Mitsubishi Denki Kabushiki Kaisha

Kouji Kise

Hideki Yabe

Hiroshi Watanabe

Koichi A Ono

Akihiko Furukawa

Tomohiro Sasagawa

Tsuyoshi Horikawa

Akihiro Suzuki

Takaaki Kawahara

Toshiyuki Oishi

Taisuke Furukawa

Naohiko Fujino

Noboru Mikami

Hitoshi Wakata

Kenyu Haruta

Kenichi Kuroda

Mutsumi Tsuda

Junji Tanimura

Tetsuya Takami

Kazuyoshi Kojima

Kazuo Kuramoto

Toyoki Kitayama

Yoshio Saito

Yukihiko Wada

Keisuke Nanba

Akimasa Yuki

Tetsuo Makita

Hiroshi Kuroki

Tetsuo Ogama

Yasuji Matsui

In an x-ray absorber in accordance with the present invention, reduced transmittance of the x-ray absorber is suppressed while phase shift amount in the vicinity of &#x3c0;-radians is achieved. For this purpose, a material is used that has a high transmittance per film thickness and contains an element with a high phase shift amount and an element with a low transmittance, as a material composition that forms the x-ray absorber. In other words, the transmittance of the x-ray absorber is mainly determined by the element with a low transmittance, and phase shift falling short of &#x3c0;-radians is compensated with the element with a high transmittance and a high phase shift.

X-ray mask

In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 &angst;, emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1&deg;, transmitting the light through a beryllium window of 20 &mgr;m and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 &mgr;m in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 &angst; and not more than 13 &angst; and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.

Exposing method and semiconductor device fabricated by the exposing method

A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

Thin film forming apparatus using laser

Growing community of inventors

Hyogo, Japan

Kouji Kise