Hitachi, Ltd.

Kouji Ishiguro

Hajime Murakami

Eiji Setoyama

Minoru Fujimoto

Hirofumi Seki

Kouji Kuwabara

Isao Hashimoto

Satoshi Ichimura

Kazuo Mera

Makoto Yano

Yasuhiro Mochizuki

Satoshi Takemori

Kiyoshi Okumura

Yasuo Yamashita

Hiroo Ohkawa

Sensuke Okada

Kiyoshi Saito

A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-plate in concentric circles, with the polarity of each magnets in each circle being alternated, and the other group of the magnets being arranged around the side wall of the plasma generating chamber in rings, with the polarity of each magnet in each ring being alternated, to form a cusped magnetic field to confine the plasma in the plasma generating chamber; and a holding device which is provided in the plasma generating chamber, to hold a substrate to be processed with the plasma; wherein the magnet means arranged on the roof-plate and the magnet means arranged around the side wall are held in such a way that they can be moved up and down.

Plasma processing apparatus and method of cleaning the apparatus

Dielectric bodies are arranged in waveguide portions for passing microwave radiation and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies are arranged to intersect at least an electron cyclotron resonance area of the waveguide portions. A tip end portion of the dielectric bodies at a side of the plasma generating chamber are positioned toward at a side of the plasma generating chamber from an intermediate portion in an axial direction length of a first permanent magnet which is arranged by enclosing an outer periphery of the waveguide portions, and a tip end portion of the dielectric bodies at a side of the plasma generating chamber is substantially consistent with an inner face of the plasma generating chamber.

Plasma processing apparatus with a dielectric body in the waveguide

An ion injection device is provided which permits ion injection into a wafer with an optimum ion beam injection angle, and the ion injection device is characterized, by the provision of a wafer holding means for holding a wafer into which ion beam taken out from an ion source is implanted; a relative position varying means for varying the relative position between the wafer holding means and the ion beam within a plane substantially perpendicular to the direction of the ion beam; and an incidence angle varying means for varying an incidence angle of the ion beam on the surface of the wafer held on the wafer holding means. More specifically, the wafer holding means is a rotatable disk which holds a plurality of wafers on the circumference thereof, and the relative position varying means is constituted by a rotating means which causes the rotatable disk to rotate in a plane substantially perpendicular to the direction of the ion beam and by a rocking means for rocking the rotatable disk in a plane substantially perpendicular to the direction of the ion beam.

Ion injection device and method therefor

A laser marking apparatus comprises a pulse laser oscillator which emits a linearly polarized laser beam; a transmission type liquid crystal mask which displays a pattern to be marked on an article in one of a positive pattern display mode and a negative pattern display mode by dots arranged in a matrix form and which allows to pass the emitted laser beam but differentiates the polarization plane of the laser beam which has passed through masked portions from that through unmasked portions; a polarized beam splitter disposed downstream the transmission type liquid crystal mask for selectivity passing the laser beam to be irradiated on the article to be marked from the transmission type liquid crystal mask; a TV camera for detecting a discriminator indicating the thermal conductivity of the article to be marked; a recognition unit which determines the thermal conductivity of the article to be marked based upon the detected discriminator; and a control unit which controls the transmission type liquid crystal mask to operate in one of the positive pattern display mode and the negative pattern display mode based upon the determined thermal conductivity of the article to be marked in such a manner that when the determined thermal conductivity of the article to be marked is low, the positive pattern display mode is selected and when the determined thermal conductivity of the article to be marked is high, the negative pattern display mode is selected.

Laser Marking apparatus

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Hitachi, Japan

Kouji Ishiguro