Sumitomo Heavy Industries Ion Technology Co., Ltd.

Sumitomo Eaton Nova Corporation

Kouji Inada

Mitsuaki Kabasawa

Haruka Sasaki

Kazuhiro Watanabe

Mitsukuni Tsukihara

Makoto Sano

Kouji Kato

Tatsuya Yamada

Michiro Sugitani

Noriyasu Ido

Yoshitomo Hidaka

Hitoshi Ando

Hayao Kawai

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.

Ion implanter and electrostatic quadrupole lens device

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

High energy ion implanter, beam current adjuster, and beam current adjustment method

An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.

Ion beam measuring device and method of measuring ion beam

An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.

Ion implanter, ion implantation method, and beam measurement apparatus

An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.

Ion implantation apparatus

A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter.

High-energy ion implanter

A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.

An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.

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Ehime, Japan

Kouji Inada