Mitsui Chemicals Tohcello, Inc.

Kouji Igarashi

Jin Kinoshita

Hiroyoshi Kurihara

Toru Miura

Shinichi Usugi

Akimitsu Morimoto

Jun Kamada

Noboru Kawasaki

Hideki Fukumoto

Makoto Sukegawa

The method for manufacturing an electronic device includes at least: a step of preparing a structure provided with an adhesive film provided with a base material layer, an adhesive resin layer (A) provided on a first surface side of the base material layer and for temporarily fixing an electronic component, and an adhesive resin layer (B) provided on a second surface side of the base material layer and in which an adhesive force is decreased by an external stimulus, an electronic component attached to the adhesive resin layer (A) of the adhesive film, and a support substrate attached to the adhesive resin layer (B) of the adhesive film; at least one step selected from a step of decreasing water content in the adhesive film and a step of decreasing water content in the structure; and a step of sealing the electronic component with a sealing material.

Method for manufacturing electronic device

An adhesive film includes a base material layer; an adhesive resin layer (A) provided on a first surface side of the base material layer; and an adhesive resin layer (B) provided on a second surface side of the base material layer and in which an adhesive force is decreased by an external stimulus, in which, as measured by method 1, an integrated tacking force value (F) of the adhesive resin layer (B) is 1.0 gf/sec or more at a test speed of 2.5 mm/min and a test temperature of 130&#xb0; C., and an integrated tacking force value (F) of the adhesive resin layer (B) is 7.0 gf/sec or more at a test speed of 30 mm/min and a test temperature of 130&#xb0; C.

Adhesive film and method for manufacturing electronic device

An adhesive film used when sealing an electronic component to temporarily fix the electronic component, the adhesive film including a base material layer, an adhesive resin layer which is provided on a first surface side of the base material layer and which is for temporarily fixing the electronic component, and an adhesive resin layer which is provided on a second surface side of the base material layer and of which the adhesive strength decreases according to an external stimulus, in which the adhesive resin layer includes a polyvalent carboxylic acid ester-based plasticizer and an adhesive resin, and a content of the polyvalent carboxylic acid ester-based plasticizer in the adhesive resin layer is more than or equal to 0.7 parts by mass and less than or equal to 50 parts by mass with respect to 100 parts by mass of the adhesive resin included in the adhesive resin layer.

Adhesive film having adhesive resin layers and method of manufacturing electronic apparatus using the adhesive film

This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G'bmin of the storage elastic modulus G&#x2032;b in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G&#x2032;b250 at 250&#xb0; C. of 0.005 MPa or above, and a temperature at which G&#x2032;bmin is exhibited of 50-150&#xb0; C. The adhesive surface layer C has a minimum value G&#x2032;cmin of the storage elastic modulus G&#x2032;c in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.03 MPa.

Semiconductor wafer surface protection film and method for manufacturing semiconductor device

An adhesive film of the present invention includes a base material layer and a self-peeling adhesive layer laminated therein. The base material layer has a thermal contraction percentage in a direction of flow (thermal contraction percentage in an MD direction) and a thermal contraction percentage in an orthogonal direction with respect to the direction of flow (thermal contraction percentage in a TD direction) that satisfy the following conditions: (1) after heating at 150&#xb0; C. for 30 minutes, 0.4&#x2266;|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|&#x2266;2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction&#x2266;2%, and (2) after heating at 200&#xb0; C. for 10 minutes, 0.4&#x2266;|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|&#x2266;2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction&#x2267;3%.

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Tokai, Japan

Kouji Igarashi