Nec Corporation

Kouji Hamada

Shuichi Saito

Kousuke Miyoshi

Naoharu Nishio

Toshiya Hayashi

Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000&deg; C. to 1,200&deg; C. at a ramp-up rate of at least 200&deg; C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (&sgr;/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.

Growing community of inventors

Tokyo, Japan

Kouji Hamada