Kabushiki Kaisha Toshiba

Kabushiki Kaisah Toshiba

Kouji Araki

Toshio Shimizu

Hiroshi Komorita

Yutaka Ishiwata

Hiroshi Fukuyoshi

Hiroyuki Hiramoto

Yasuhiko Taniguchi

Kosoku Nagata

Wataru Takahashi

Nobuyuki Sato

Shinjiro Kojima

Toshihiro Kato

Hikaru Okunoyama

Satoru Yanagida

Noriaki Dousen

Tetsunori Niimi

An insulating substrate () has insulative ceramic layers () laid one upon another, an intermediate layer () made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer () joined to the top surface of a top one of the ceramic layers, and a second conductive layer () joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.

Insulating substrate, manufacturing method thereof, and module semiconductor device with insulating substrate

An insulating substrate ( ) has insulative ceramic layers ( ) laid one upon another, an intermediate layer ( ) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer ( ) joined to the top surface of a top one of the ceramic layers, and a second conductive layer ( ) joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.

Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer

In a method for manufacturing a laminated plate used in a semiconductor device according to the present invention, a conductive member is processed to form a frame and a wiring pattern supported by the frame integrally with each other, the wiring pattern is bonded to the major surface of a base member by high-temperature heating, using the frame as a guide, thereby to form a laminated layer, and the frame is removed from the laminated layer to form a desirable laminated plate.

Method for manufacturing a laminated plate used in a semiconductor device

A resin-seal type semiconductor device includes a main substrate divided into first and second surfaces on which first and second insulating substrates are respectively provided. Circuit wiring patterns and first end portions of outer leads are provided on the first and second insulating substrates. Semiconductor elements are soldered onto the wiring patterns and coated with a surface protection material. The main substrate is then folded over so that the first and second surfaces oppose one another and the device acquires a U-shaped cross-section. A space formed between the first and second surfaces inside the U-shape is sealed with a resin such that second end portions of the outer leads are exposed from the resin.

Resin-seal type semiconductor device

A plurality of circuit boards are used and frames are attached to the circuit boards to surround the peripheral portions thereof. Since connection terminals electrically connected to the respective circuit boards are attached to the respective frames, a semiconductor device having semiconductor elements mounted at high density can be formed by stacking the first and second frames on each other and setting the respective connection terminals in contact with each other to electrically connect the circuit boards to each other.

Semiconductor device

A semiconductor device comprises a plurality of pellets fixed on a bed by a conductive adhesive agent, an insulating substrate having a junction wiring fixed on the bed between the semiconductor pellets, and wires for connecting the pellets and insulating substrate. The insulating substrate is fixed on the bed by an insulating adhesive agent including filling material such as particles of silicon dioxide and metal particles. The surfaces of the filling material particles are coated with an oxide film.

Semiconductor device mounted upon an insulating adhesive with silicon

A wire bonding capillary for a bonding process comprises an elongated capillary body having an axial bore through the body for receiving a wire of a predetermined diameter to be bonded, and a working face on one end of the body for applying force to the bonding wire during the bonding process. The working face includes a first surface portion surrounding the bore and having a first radius of curvature, and a second surface portion adjacent to the first surface portion and having a second radius of curvature smaller than the first radius curvature.

Growing community of inventors

Yokohama, Japan

Kouji Araki