Mitsubishi Denki Kabushiki Kaisha

Ryoden Semiconductor System Engineering Corporation

Kouichirou Tsutahara

Takayuki Suenaga

Tooru Yamaguchi

Hiroshi Ohnishi

Takeshi Iwamoto

Shigeo Sasaki

Yoshihiko Kusakabe

Kazuo Yoshida

Nobuyuki Kosaka

Yoshimi Kinoshita

Kenichiro Yamanishi

Toshihiko Noguchi

Taizo Eshima

Tomoyuki Kanda

Katsuhisa Kitano

Toru Takahama

Hideki Komori

Toshio Kobayashi

Shin Hasegawa

Hiroshi Tanaka

Suguru Nagae

Masashi Ohmori

Masanobu Iwasaki

Toshiyuki Toyoshima

Akihiro Washitani

Toru Yamaguchi

The object of the present invention is to provide a polishing agent for processing semiconductor, which can control coagulation and sedimentation and has stable and re-productive polishing properties under a proper dispersing condition to prevent generation of polishing flaw. The polishing agent for processing semiconductor comprises a compound having glucose structure, polishing particles and water.

Polishing agent for processing semiconductor, dispersant used therefor and process for preparing semiconductor device using above polishing agent for processing semiconductor

It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer (1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.

Semiconductor producing apparatus, and wafer vacuum chucking device, gas

A liquid vaporizing apparatus includes a container for holding a liquid at a constant temperature with a temperature adjustment unit and a gas that does not react with the liquid is bubbled through the liquid in the container to vaporize the liquid. The container for holding the liquid has an internal space above the liquid and a second temperature adjustment unit for controlling the temperature of the internal space separately from the temperature of the liquid in the container. Since the internal space is maintained at a constant temperature, higher than the temperature of the liquid, the quantity of the vaporized liquid produced is stable.

Liquid vaporizing apparatus

It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer(1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.

Semiconductor producing apparatus comprising wafer vacuum chucking device

An atmospheric CVD apparatus includes a gas head for ejecting reaction gases consisting of SiH.sub.4 gas and O.sub.2 gas, and a stage which is arranged at a position above the gas head and which is rotated while a semiconductor wafer retained on the bottom of the stage is heated to a temperature in the range of 380.degree. C. to 440.degree. C., the distance between the surface of the semiconductor wafer and the gas supply head being set in the range of 8 mm to 25 mm. The flow ratio between the reaction gases is so adjusted that when the flow rate of the O.sub.2 gas is represented as 1.0, that of the SiH.sub.4 gas is represented as 0.07 to 0.10. The apparatus deposits a reaction product film which excels in film thickness uniformity with a satisfactory level of reproducibility. Furthermore, the apparatus involves very little generation of foreign matter, including reaction products in the form of particles sticking to the surface of the semiconductor wafer, thereby making it possible to produce high-quality semiconductor devices.

Apparatus for atmospheric chemical vapor deposition

A semiconductor wafer heating device includes a hollow heating stage. A semiconductor wafer is disposed over one surface of the heating stage and a heater is provided over the other surface thereof. A fluid having an excellent heat conductivity which is filled in the hollow space of the heating stage is stirred uniformly. In consequence, the surface temperature of the heating stage can be made uniform without employing a thick heating stage, and an excellent temperature control of the heating stage can be ensured.

Semiconductor wafer heating device

Growing community of inventors

Itami, Japan

Kouichirou Tsutahara