Tokyo Electron Limited

Kouichirou Tanaka

Masahiro Fukuda

Yusaku Hashimoto

Takeshi Shimoaoki

Hiroshi Ichinomiya

Atsushi Ookouchi

Akiko Kai

Kousuke Yoshihara

Taro Yamamoto

Mitsuhiro Tanoue

Koichi Obata

Yasuhiro Kuga

Kentaro Yoshihara

Shogo Takahashi

Yusuke Miyakubo

Takuya Miura

Shougo Takahashi

A nozzle unit for a liquid treatment apparatus that performs a liquid treatment on a substrate using a liquid, includes a first gas nozzle having a discharge flow path for allowing a first gas to flow through the discharge flow path and a first discharge port for discharging the first gas flowing through the discharge flow path toward a surface of the substrate, wherein the first discharge port is formed so as to extend in a first direction along the surface, and wherein a width of the discharge flow path in the first direction increases as the discharge flow path approaches the first discharge port, so that the first gas is discharged radially from the first discharge port.

Nozzle unit, liquid treatment apparatus, and liquid treatment method

A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.

Development processing apparatus and development processing method

A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.

Substrate processing method, storage medium, and substrate processing apparatus

A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

Developing treatment method, computer storage medium and developing treatment apparatus

A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.

Liquid processing apparatus, liquid processing method, and computer-readable recording medium

When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzleconfigured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzleconfigured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.

Substrate processing method, substrate processing apparatus and recording medium

A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.

Substrate processing method and recording medium capable of suppressing non-uniformity in degree of progression of processing depending on position on substrate

A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

Development method, development device, and non-transitory computer-readable storage medium

A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.

Substrate processing method, substrate processing apparatus, and non-transitory computer-readable medium

There is provided a guide memberin which an inclined surfacethereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding memberwhich surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding memberhas, at an inner surface side thereof, two groove portionsextended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member, a vortex flow is formed within the groove portionsand stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup bodycan be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.

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Koshi, Japan

Kouichirou Tanaka