Sharp Kabushiki Kaisha Corporation

Other

Kouichirou Adachi

Hiroshi Iwata

Akihide Shibata

Takayuki Ogura

Seizo Kakimoto

Nobutoshi Arai

Akira Sakai

Masayuki Nakano

Masatomi Harada

Satoshi Morishita

Yukio Yasuda

Shigeaki Zaima

The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.

Light emitting device and method for manufacturing the same

A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card

A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film () on a semiconductor substrate () forming a first electrode, forming a first conductor film () on the first insulation film (), forming a second insulation film (B) on the surface of the first conductor film (), forming a third insulation film containing conductor particulates () on the second insulation film (B), and forming a second conductor film forming a second electrode on the third insulation film.

Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment

A semiconductor device having a gate electrode on a Si-substrate through a gate oxide film; a first impurity diffusion region having a conductivity type reversed to a well which will form a part of source and drain regions in the two opposing sides of the gate electrode through gate electrode sidewall dielectric films; a second impurity diffusion region having the same conductivity type as the first impurity diffusion region beneath the gate electrode sidewall dielectric film, touching a channel region directly below the gate electrode and being shallower than the first impurity diffusion region; a titanium silicide film on the gate electrode and the surface of the Si-substrate of the first impurity diffusion region in the two opposing sides of the gate electrode sidewall dielectric film; and a third impurity diffusion region, formed in the first impurity diffusion region, having a higher concentration than the first impurity diffusion region and the same conductivity type as the first and second impurity diffusion region. The above semiconductor device is able to suppress the short-channel effects, and reduce the source-drain parasitic resistance and the source-drain junction leakage current while maintaining a small source-drain capacity.

Semiconductor device and process and apparatus of fabricating the same

Growing community of inventors

Tenri, Japan

Kouichirou Adachi