Nichia Corporation

Kouichiroh Deguchi

Akinori Yoneda

Hirofumi Kawaguchi

Takao Yamada

Daisuke Sanga

Yoshiyuki Aihara

Takeshi Kususe

Nobuhiro Ubahara

Nobuhiko Ubahara

A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Method of making layered structure with metal layers using resist patterns and electrolytic plating

Method of manufacturing nitride semiconductor light emitting element having thick metal bump

A method of manufacturing a flip-chip nitride semiconductor light emitting element includes steps of providing a nitride semiconductor light emitting element structure; forming an insulating protective layer on the nitride semiconductor light emitting element structure; forming a resist pattern having openings above an n-side electrode connecting surface and a p-side electrode connecting surface; etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the resist pattern as a mask; forming a first metal layer that becomes an n-side electrode and a p-side electrode, the first metal layer being formed as a continuous layer disposed on the n-side electrode connecting surface, the p-side electrode connecting surface and the resist pattern; forming a second metal layer that becomes metal bumps by electrolytic plating using the first metal layer as an electrode for the electrolytic plating; and removing the resist pattern.

A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.

Semiconductor light emitting element

A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.

Nitride semiconductor device

A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.

Growing community of inventors

Tokushima, Japan

Kouichiroh Deguchi