A.l.m.t. Corporation

Sumitomo Electric Industries, Limited

Kouichi Takashima

Akira Sasame

Yugaku Abe

Shin-ichi Yamagata

Masatoshi Majima

Mitsunori Kobayashi

Akira Fukui

Hideaki Morigami

Kazuya Kamitake

Masashi Narita

Yoshifumi Aoi

Eiji Kamijo

Gouhei Toyoshima

A composite material of the present disclosure contains a plurality of diamond particles, copper, and at least one first element selected from the group consisting of silicon, chromium, cobalt, nickel, molybdenum, titanium, vanadium, niobium, tantalum tungsten and aluminum, wherein the content rate of the first element based on the total mass of the copper and the first element is 50 ppm or higher and 2,000 ppm or lower.

Composite material, heat sink and semiconductor device

A semiconductor element mounting member is arranged to infiltrate a matrix metal into a porous body that is formed by sintering diamond particles being in direct contact with each other and that has an infiltration auxiliary layer selectively formed only on the exposed surface of each diamond particle. A production method includes a step at which a mixture of diamond particles, a powder of a chemical element out of which the infiltration auxiliary layer is made, and an ammonium chloride powder is compressed and molded, is then heated to 900&#xb0; C. or more, and is formed into the porous body. A semiconductor device has a semiconductor element mounted on an element mounting surface of the semiconductor element mounting member with a connecting layer therebetween.

Semiconductor element mounting member, method of producing the same, and semiconductor device

The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10 &#x3bc;m to 40 &#x3bc;m and a surface-direction diametrical size of 10 &#x3bc;m to 3 mm is 50/cmor less, and on the connecting surface, a coating layer, which is formed of a solder or a brazing material, has a thickness of 1 &#x3bc;m to 30 &#x3bc;m, an arithmetic mean roughness Rof a roughness curve showing a surface roughness of R&#x2266;2 &#x3bc;m, and a maximum height roughness Rof R&#x2266;15 &#x3bc;m, and fills and covers the recesses or protrusions, is formed.

Semiconductor element mounting substrate, semiconductor device using the same, and method for manufacturing semiconductor element mounting substrate

The present invention provides a heat spreaderwhich includes a substratecomposed of a metal-containing material and in which a second-component connection surfaceof the substrateis provided with wettability with a solder and a solder block layeris formed in at least one of respective regions, adjacent to each other, of the second-component connection surfaceand a side surfaceWhen a semiconductor deviceis manufactured by connecting a semiconductor laserto the element connection surfacethrough an element connecting layerand then connecting a heat sinkto the second-component connection surfacethrough a second-component connecting layerhaving a melting point lower than that of the element connecting layerthe semiconductor block layercan inhibit the melted solder from creeping up along the side surfacewhich can prevent defects that the solder that has crept up short-circuits the semiconductor laserand blocks a luminous flux of laser light emitted from an emission surfaceof the semiconductor laser

Heat spreader and semiconductor device using the same

A configuration for a substrate for a semiconductor device which makes it possible to achieve further stabilization of the voltage for driving a semiconductor element () to be mounted is provided. The substrate for a semiconductor device is provided with a base () and an electrically insulating film () formed on at least a portion of the surface of this base (). The base () is made of one type of material selected from the group consisting of an alloy including copper and tungsten, an alloy including copper and molybdenum, an alloy including copper, tungsten and molybdenum, a composite material including aluminum and silicon carbide, and a composite material including silicon and silicon carbide. The electrically insulating film () includes plural layers made of at least one type of film selected from the group consisting of a diamond-like carbon film, an aluminum oxide film and a silicon oxide film.

Substrate for semiconductor device and semiconductor device

In a semiconductor heat-dissipating substrate made of a Cu&#x2014;W alloy whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 &#x3bc;m or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 &#x3bc;m or less, thermal conductivity of 210 W/m&#xb7;K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.

Semiconductor heat-dissipating substrate, and manufacturing method and package therefor

In a semiconductor heat-dissipating substrate made of a Cu&#x2014;W alloys whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 &#x3bc;m or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 &#x3bc;m or less, thermal conductivity of 210 W/m&#xb7;K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.

A plate type member of a Cu--W and/or Mo alloy can be bonded to a ceramic member or the like to form a semiconductor device package without problems, because the degree of warping of the plate type member during a heating step in its fabrication is suppressed. In the plate type member consisting of a Cu--W and/or Mo alloy, including a small amount of alkaline earth metal impurity the difference between alkaline earth metal contents in upper and lower halves of the member along the thickness direction is not more than 10 ppm, or delete 'an alkaline earth' preferably not more than 5 ppm relative to the content of W and/or Mo. This plate type member is manufactured by reducing the alkaline earth metal content in W and/or Mo raw material powder, or standing a skeleton vertically upright on a refractory plate for carryiing out Cu infiltration, and performing homogeneous heating and cooling replace during the manufacturing thereby preventing maldistribution of the alkaline earth metal.

Growing community of inventors

Itami, Japan

Kouichi Takashima