Tokyo Electron Limited

Tokyo Electron Limi Ted

Kouichi Sekido

Kensaku Narushima

Katsumasa Yamaguchi

Kennan Mo

Atsushi Matsumoto

Takanobu Hotta

Eiichi Komori

Hironori Yagi

Nagayasu Hiramatsu

Tomohisa Kimoto

Takuya Kawaguchi

Noriyuki Watanabe

Nuri Choi

A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.

Raw material supply apparatus and film forming apparatus

A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.

Flow rate control method, flow rate control device, and film forming apparatus

A method of processing each of a plurality of substrates comprises: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.

Method of processing substrate

There is provided a gas supply method for temporarily storing a raw material gas generated by vaporizing a raw material accommodated in a raw material container inside a buffer tank together with a carrier gas and subsequently supplying the raw material gas into a processing container. The gas supply method includes: controlling a flow rate of a gas exhausted from the buffer tank and a flow rate of the raw material gas and the carrier gas filled in the buffer tank, so that a second internal pressure of the buffer tank becomes equal to a first internal pressure of the buffer tank when a process is performed by supplying the raw material gas into the processing container, before supplying the raw material gas into the processing container.

Gas supply method and film forming method

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Nirasaki, Japan

Kouichi Sekido