Murata Manufacturing Co., Ltd.

Gs Yuasa International Ltd.

Gs Yuasa Corporation

Kouichi Sakamoto

Kazuya Okabe

Hiroaki Mori

Toshinori Bandou

Hisashi Ariyoshi

Shuichi Izuchi

Susumu Fukuda

Masaaki Sueyoshi

In a method for preparing a hydrogen absorbing electrode, a hydrogen absorbing alloy which contains a rare earth element as an alloy constituent and a transition metal element is immersed in an aqueous alkaline solution so that the saturation mass susceptibility is 1.0 to 6.5 emu/g of the hydrogen absorbing alloy. The hydrogen absorbing alloy is mixed through the immersing step with an oxide or hydroxide of a rare earth element wherein the oxide or hydroxide has as a main component at least one element selected from the group consisting of Dy, Ho, Er, Tm, Yb, and Lu. Then, a mixture of the hydrogen absorbing alloy and the oxide or hydroxide of the rare earth element is applied to form a desired shape.

Method for preparing hydrogen absorbing electrode and nickel metal-hydride battery

A sealed nickel metal-hydride battery shows a high output density and an excellent cycle performance particularly in a cold atmosphere. In a nickel metal-hydride battery having a nickel electrode and a hydrogen absorbing electrode respectively as positive electrode and negative electrode, the hydrogen absorbing electrode is formed by making an conductive support carry hydrogen absorbing alloy powder of rare earth elements and non-rare earth elements including nickel and the saturation mass susceptibility of the hydrogen absorbing alloy powder is 2 to 6 emu/g while the rate at which the hydrogen absorbing electrode carries hydrogen absorbing alloy powder per unit area is 0.06 to 0.15 g/cm.

Nickel metal-hydride battery

A Schottky barrier diode includes a semiconductor substrate, an ohmic electrode formed on a first region of the semiconductor substrate, and a Schottky metal electrode formed on a second region spaced apart from the first region on the semiconductor substrate. The Schottky electrode includes at least one ohmic portion forming an ohmic contact with the semiconductor substrate, whereby rectifying characteristics of the Schottky barrier diode are improved.

Schottky barrier diode with ohmic portion

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Kyoto, Japan

Kouichi Sakamoto