Panasonic Intellectual Property Management Co., Ltd.

Kouichi Saitou

Takashi Hasegawa

Masao Uchida

Chiaki Kudou

Takayuki Wakayama

Osamu Kusumoto

Tsutomu Kiyosawa

Atsushi Ohoka

Tsuneichiro Sano

Osamu Ishiyama

Daisuke Shindo

A semiconductor device includes a silicon carbide semiconductor layer, a termination region disposed in the silicon carbide semiconductor layer, an insulating film covering part of the termination region, an electrode disposed on the silicon carbide semiconductor layer, a seal ring disposed on remaining part of the termination region and surrounding the electrode, and a passivation film covering the insulating film and the seal ring. Assuming that an outer peripheral end of the seal ring and an outer peripheral end of the passivation film have distance L2 at a side of the silicon carbide semiconductor layer, the outer peripheral end of the seal ring and the outer peripheral end of the passivation film have distance L1 at a corner, and the outer peripheral end of the passivation film at the corner has radius of curvature R1, L1&#x3e;L2 and R1&#x2265;L2 are satisfied.

Semiconductor device

A semiconductor device according to an exemplary embodiment includes a semiconductor substrate, an interlayer insulating layer, at least one electrode, an inorganic protective layer, and an organic protective layer. The interlayer insulating layer is formed on the semiconductor substrate and has at least one opening. The at least one electrode has part formed on an edge of the at least one opening, and has other part electrically connected, in the at least one opening, to the semiconductor substrate. The inorganic protective layer includes an inner edge portion and an outer edge portion. The inner edge portion covers an edge of the at least one electrode. The inorganic protective layer, except for the inner edge portion, is formed on the interlayer insulating layer. The organic protective layer covers the inorganic protective layer. One of the inner edge portion and the outer edge portion of the inorganic protective layer has an undercut.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a bulk substrate, and an epitaxial layer formed on a surface of the bulk substrate. A part of the surface of the bulk substrate is an alignment region including an alignment pattern defined by at least one recess or one protrusion. An ion-injected layer is formed in at least a part of the alignment region.

Semiconductor device including ion implanted alignment marks and method of manufacturing the same

A semiconductor device according to an exemplary embodiment includes a semiconductor substrate, a gate insulating layer, a gate electrode, an interlayer insulating layer, a contact hole, a metal layer, and a source line. The gate electrode is disposed on the gate insulating layer. The interlayer insulating layer covers the gate electrode. The contact hole penetrates the gate insulating layer and the interlayer insulating layer, causes a portion of the surface of the semiconductor substrate to be exposed, and includes an inner surface defined by a side surface of the interlayer insulating layer and a side surface of the gate insulating layer. The metal layer covers an upper surface of the interlayer insulating layer, the inner surface of the contact hole, and at least part of the portion of the surface of the semiconductor substrate exposed by the contact hole.

Semiconductor device and method for manufacturing same

A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film. The first protective film covers the inner-circumferential upper source electrode, the upper gate electrode, and an inner side surface of the one or more outer-circumferential upper source electrodes except for a pad region. The second protective film covers the first protective film and at least a part of the one or more second conductivity type rings.

Silicon carbide semiconductor device

A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface, barrier regions having a second conductivity type and disposed within the silicon carbide semiconductor layer, an edge termination region having the second conductivity type and disposed within the silicon carbide semiconductor layer, the edge termination region enclosing the barrier regions, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface, wherein each of the barrier regions has a polygonal boundary with the silicon carbide semiconductor layer, and each of sides of the polygonal boundary has an angle of 0&#xb0; to 5&#xb0; inclusive relative to &#x3c;11-20&#x3e; direction of crystal orientations of the semiconductor substrate.

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Toyama, Japan

Kouichi Saitou