Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi-ge Nuclear Energy, Ltd.

Hitachi-science Systems, Ltd.

Other

Hitachi, Ltd.

Kouichi Kurosawa

Hideyuki Kazumi

Toshiyuki Yokosuka

Yuji Matsui

Hajime Kawano

Takeshi Sato

Yuzuru Mizuhara

Fujio Yoshikubo

Takeshi Sunaoshi

Masaaki Komori

Naoyuki Kono

Masashi Fukaya

Yasuhira Nagakubo

Ryuichi Funatsu

Atsushi Baba

Chahn Lee

So Kitazawa

Katsuhiko Hirano

Masahiro Tooma

Takehiko Konno

Toshiharu Nagashima

Hisamitu Hatou

Noboru Saitou

Kazuhiro Nitta

Masanari Furiki

Kenichi Myochin

Mitsuhiko Yamada

Yoshitoshi Suzuki

Shinji Go

Youichi Mahara

The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG.).

Charged-particle beam device and cross-sectional shape estimation program

The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG.).

Charged particle ray device and cross-sectional shape estimation program

The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

Charged-particle beam device

The purpose of the present invention is to reduce the amount of charged particles that are lost by colliding with the interior of a column of a charged particle beam device, and detect charged particles with high efficiency. To achieve this purpose, proposed is a charged particle beam device provided with: an objective lens that focuses a charged particle beam; a detector that is disposed between the objective lens and a charged particle source; a deflector that deflects charged particles emitted from a sample such that the charged particles separate from the axis of the charged particle beam; and a plurality of electrodes that are disposed between the deflector and the objective lens and that form a plurality of electrostatic lenses for focusing the charged particles emitted from the sample on a deflection point of the deflector.

Charged particle beam device

A single-element ultrasonic sensor includes a single transducer element and transmits an ultrasonic wave on the basis of a pulse wave. An ultrasonic array sensor includes a plurality of transducer elements and receives an ultrasonic reflected wave. A pulsar supplies the pulse wave to the single element ultrasonic sensor. A receiver receives electric signals from the transducer elements included in the ultrasonic array sensor. An amplification and conversion unit amplifies the electric signals received from the transducer elements included in the ultrasonic array sensor, converts the electric signals into digital signals, and arranges the digital signals in a serial order so as to generate a serial digital signal. An image generator generates an image on the basis of the serial digital signal.

Ultrasonic observation equipment, ultrasonic observation system, and ultrasonic observation method

An evaluation method of residual stress in water jet peening includes a step of creating an analytical model including meshes according to a water jet peening (WJP) object, the shape of a nozzle, and an injection distance, a step of inputting WJP execution conditions, a step of calculating the internal pressure pof a cavitation bubble and a bubble number density nthrough jet flow analysis for a jet flow jetting from the nozzle, a step of calculating cavitation energy according to the internal pressure pof a cavitation bubble and a bubble number density n(S), a step of calculating the burst energy of cavitation bubbles from the cavitation energy C, and a step of calculating the compressive residual stress of the WJP object from the collapse pressure of cavitation bubbles. Accordingly, the residual stress of the WJP object can be evaluated precisely in a shorter time.

Evaluation method of residual stress in water jet peening and method of executing water jet peening

A high-pressure water jet is injected from a nozzle scanned and a shock wave generated due to the collapse of bubbles included in the water jet is impacted on a WJP execution object. Tensile residual stress close to the surface of the WJP execution object is improved to compressive residual stress. The shock wave is detected by a pressure sensor and a shock wave generation frequency is obtained. Whether the obtained shock wave generation frequency is larger than a set value or not is decided. When the shock wave generation frequency is larger than the set value, a high-pressure pump is stopped and the injection of the water jet from the nozzle is stopped. When the shock wave generation frequency is equal to or smaller than the set value, the operation condition of the high-pressure pump is changed. The pressure of the water jet injected from the nozzle is increased and the WJP is executed for a part of the WJP execution object where the shock wave generation frequency is equal to or smaller than the set value. Improvement effect of the residual stress of the WJP execution object can be confirmed more accurately.

Water jet peening method and apparatus thereof

There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stagethat holds a semiconductor sample, multiple probesused to measure electrical characteristics of a semiconductor device on the semiconductor sample, a power source that applies voltage and/or current to the probe, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample

Inspection apparatus having a heating mechanism for performing sample temperature regulation

Inspection apparatus and method

The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.

Charged particle beam apparatus

An indicator indicating the direction of a diffraction grating pattern is provided on a chip so that the direction of the pattern can be accurately determined. The indicator includes an anisotropic shape of the chip and the formation of a marking-off line or a mark on the chip, allowing the direction of the diffraction grating pattern to be determined from the external appearance of the chip. As a result, the chip can be mounted on a sample base while accurately determining the direction of the diffraction grating pattern, thus allowing a calibration operation to be performed accurately and reliably.

Nanoscale standard sample and its manufacturing method

An opening portion is produced by cutting a recirculating piping connected to a recirculating nozzle of a reactor pressure vessel A repairing device is brought into an annulus of the reactor pressure vessel from the opening thereby repairing the annulus

Device and method for repairing inside of reactor pressure vessel

Growing community of inventors

Hitachi, Japan

Kouichi Kurosawa