Chisso Corporation

Kouichi Kunimune

Hirotoshi Maeda

Shiro Konotsune

Yoshiya Kutsuzawa

Kouichi Katou

Eiji Watanabe

Ryuji Kobayashi

Kenji Furukawa

Shizuo Murata

Masami Tanaka

Kazutsune Kikuta

Naoyoshi Emoto

Haruo Kato

Setsuo Itami

Takao Kawamoto

Toshiharu Aono

Hiromi Egawa

Yoshinori Masaki

Yoshihiro Soeda

Photosensitive polymide precursor resin composition

Photosensitive polyimide resin composition

A polyimidesiloxane film having a low heat conductivity without damaging the heat resistance intrinsic of polyimide, a high hardness and a superior adherence onto its substrate, is provided, which polyimidesiloxane film comprises a cross linked copolymer having repetition units expressed by the formula (1): ##STR1## wherein R.sup.1 independently is a tetravalent organic group, R.sup.2 independently is a divalent organic group of 2 to 30 C, R.sup.3 independently is represented by 4 specified formulas, R.sup.4 and R.sup.5 each are a specified organic group, and n, p, q, and r each have a value within a range satisfying 3 specified equations, and which film exhibited a heat resistance of 511.degree. C. or higher, a hardness of 3H or higher and a heat conductivity of 0.160 or lower.

Polyimidesiloxane film of low heat-conductivity

A photosensitive resin composition containing 0.5 to 15 parts by weight of a compound generating an acid by light irradiation in 100 parts by weight of a polyamic acid amide having an alkoxysilane having a specified structure at its terminals are provided,

Photosensitive polyimide precursor composition with photoacid generator

The present invention provides a silicon-containing polyamic acid derivative which is represented by the formula (VI) ##STR1## and which has a logarithmic viscosity number of 0.1 to 5.0 dl/g at 30.degree. C. in N-methyl-2-pyrrolidone, said silicon-containing polyamic acid derivative being obtained by reacting A mol of a tetracarboxylic acid derivative, B mol of a diamine, and C mol of an aminosilicon compound so as to meet the relations of the equations (IV) and (V): ##EQU1## A photosensitive resin composition using this silicon-containing polyamic acid derivative can be easily manufactured, permits the formation of a negative type sharp relief pattern, can inhibit film reduction at the time of curing by baking, and is excellent in adhesive properties to substrates, heat stability and shelf stability.

Silicon-containing polyamic acid derivative and photosensitive resin

A photosensitive polyimide precursor composition of the present invention comprises a polyimide precursor represented by the formula (6)

Photosensitive polyimide precursor composition

Method of preparing a negative pattern utilizing photosensitive polymer

A photosensitive cover coating agent forming an insulating, protective coating having superior compatibility, sensitivity, heat resistance, adhesion, electrical properties and flexibility is provided,

Polyimide photosensitive cover coating agent

A photosensitive polymer containing a repeating unit represented by the following formula (I) and having a logarithmic viscosity number of from 0.1 to 5 dl/g as measured in a solvent at a temperature of 30.+-.0.01.degree. C. at a concentration of 0.5 g/dl: ##STR1## (wherein R.sup.1 is a trivalent or tetravalent carbocyclic aromatic group or heterocyclic group, R.sup.2 is an aliphatic group having at least two carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbocyclic aromatic group, a heterocyclic group or a polysiloxane group, R.sup.3 is a divalent organic group, R.sup.4 is ##STR2## a hydrogen atom or a monovalent organic group, R.sup.5 is a hydrogen atom or a monovalent organic group, m is independently 1 or 2, n is independently 0 or 1, and m and n meet 1.ltoreq.m+n.ltoreq.2); a method for preparing the above-mentioned photosensitive polymer; a photosensitive polymer composition containing the above-mentioned photosensitive polymer; and a method for preparing a poly(amide)imide film.

Method of forming a pattern from a photosensitive heat-resistant

A silicon-modified, adhesive polyimide film composed mainly of the repetition units of the formula (I) and a process for producing a polyimide film composite product using the above film are provided, the formula (I) being ##STR1## the above process for producing a polyimide film composite product comprising subjecting the above-silicon-modified polyimide film to contact-bonding on heating to a material to be adhered, at an ultimate curing temperature of 130.degree.-230.degree. C. The above polyimide film is highly adhesive and heat-resistant in spite of heating at a relatively low temperature.

Adhesive polyimide film

A photosensitive polymer containing a repeating unit represented by the following formula (I) and having a logarithmic viscosity number of from 0.1 to 5 dl/g as measured in a solvent at a temperature of 30.degree..+-.0.01.degree. C. at a concentration of 0.5 g/dl: ##STR1## (wherein R.sup.1 is a trivalent or tetravalent carbocyclic aromatic group or heterocyclic group, R.sup.2 is an aliphatic group having at least two carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbocyclic aromatic group, a heterocyclic group or a polysiloxane group, R.sup.3 is a divalent organic group, R.sup.4 is ##STR2## a hydrogen atom or a monovalent organic group, R.sup.5 is a hydrogen atom or a monovalent organic group, m is independently 1 or 2, n is independently 0 or 1, and m and n meet 1.ltoreq.m+n.ltoreq.2); a method for preparing the above-mentioned photosensitive polymer; a photosensitive polymer composition containing the above-mentioned photosensitive polymer; and a method for preparing a poly(amide)imide film.

Photosensitive heat-resistant polymer having hydroxyphenyl group for

The present invention provides a dehydrating agent which is less poisonous and which can be easily handled in producing a polyisoimide by dehydrating a polyamic acid. A process is also provided for producing a polyisoimide without requiring the separation of by-products. That is, the process for producing the polyisoimide of the present invention includes the step of using a dihyroquinoline derivative represented by the formula ##STR1## (wherein each R.sup.1 and R.sup.2 is independently a monovalent organic group having 1 to 8 carbon atoms) as the dehydrating agent in producing the polyisoimide by dehydrating the polyamic acid.

Process for producing polyisoimide

The present invention provides diamino compounds and liquid crystal aligning films comprising polyimides which are obtained from the said diamino compounds represented by the general formula: ##STR1## wherein R.sub.1 indicates an alkyl group having 3 to 22 carbon atoms, R.sub.2 indicates a hydrogen atom or an alkyl group having 1 to 22 carbon atoms, and R.sub.3 -R.sub.10 indicate a hydrogen atom or a methyl group, respectively. The liquid crystal aligning films are useful for STN mode display cells in realizing a high pretilt angle.

Diamino compounds and liquid crystal aligning films

The present invention is directed to a silicon polyimide precursor composition which has a viscosity suitable for the formation of films by application or another mean and which is capable of forming hard and tough films having excellent heat resistance, low coefficient of thermal expansion and strong adhesive force by heating the films, the above-mentioned films being formed by the chemical bond between silicon and polyimide. Another feature of the present invention is directed to a method for preparing a crosslinked/cured material of the aforesaid silicon polyimide precursor composition. That is, the present invention is connected with a soluble silicon polyimide precursor composition which comprises 0.5 to 40% by weight of a silicon polyimide precursor represented by the following formula (I) on another precursor obtained by imidizing the compound represented by the formula (I) and having a logarithmic viscosity number of 0.05 to 5 dl/g, 0.5 to 40% by weight of a condensate of a silicon compound represented by the following formula (II) and having a logarithmic viscosity number of 0.01 to 0.5 dl/g, and 50 to 99% by weight of a solvent: ##STR1## wherein G is ##STR2## or a hydrogen atom (except the case of n=0), R.sup.1 is independently a tetravalent carbon cyclic aromatic group, R.sup.2 is independently a carbon cyclic aromatic group, R.sup.3 is ##STR3## R.sup.4 is independently methyl or phenyl, R.sup.7 is independently alkyl having 1 to 6 carbon atoms or hydrogen, X is alkoxy, acetoxy or hydroxyl, n is n.gtoreq.0, k is 2.5.ltoreq.k.ltoreq.3, and m is 3.5&lt;m.ltoreq.4.

Silicon polyimide precursor composition

The present invention is connected with a process for preparing a novel photosensitive polyimide precursor having excellent shelf stability and high sensitivity and containing less impurities. The process for preparing a photosensitive heat-resistant polymer containing a repeating unit represented by the formula (III) comprises the step of reacting a photosensitive group-containing isoimide represented by the formula (I) with a diamine represented by the formula (II) at a temperature of 0.degree. to 100.degree. C. in the presence of a solvent: ##STR1## wherein R.sup.1 is independently a tetravalent carbon cyclic aromatic group or heterocyclic group; R.sup.2 is independently an aliphatic group having at least 2 carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbon cyclic aromatic group, a heterocyclic group or a polysiloxane group; R.sup.3 is a monovalent organic group having a photosensitive unsaturated group; and D is an oxygen atom or .dbd.N--R.sup.3.

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Ichihara, Japan

Kouichi Kunimune