Sony Corporation

Kabushiki Kaisha Toshiba

Sony Semiconductor Solutions Corporation

Nec Corporation

Kabushiki Kaisha Shinkawa

Sony Corpotation

Kouichi Harada

Kyoko Izuha

Seiichi Suenaga

Tomohiro Suetsuna

Maki Yonetsu

Kazushi Wada

Koji Kadono

Tomoo Mitsunaga

Tsuyoshi Kobayashi

Isao Hirota

Tomoko Eguchi

Shiroh Saitoh

Yohachi Yamashita

Senji Shimanuki

Junichi Furukawa

Takaaki Sarai

Seiji Kobayashi

Mitsuru Sato

Takeshi Matsuda

Yoshikazu Nitta

Yasushi Maruyama

Hayato Wakabayashi

Yasuhiro Ueda

Yoshinori Toumiya

Nobuhiro Karasawa

Hideo Nomura

Nobuhiko Umezu

Hajime Takashima

Hiroyuki Terakago

Shuji Otsuka

Keiji Mabuchi

Takashi Matsuda

Tetsuji Yamaguchi

Toshiyuki Nishihara

Mutsuki Yamazaki

Yasuyuki Hotta

Fumihiko Aiga

Kuniyuki Takahashi

Taiichiro Watanabe

Naoyuki Nakagawa

Makoto Higaki

Hiroki Hagiwara

Akihiro Tsujimura

Yusuke Kikuchi

Tetsuya Iizuka

Kenichi Okumura

Mitsuru Ishibashi

Tomonori Masuno

Mamoru Izumi

Shinichiro Izawa

Toshihide Takahashi

Ryosuke Yagi

Hiroaki Kinouchi

Yasunobu Hitomi

Daisuke Iso

Hitomi Saito

Naoto Ito

Nao Kobayashi

Kazuya Akiyama

Hiroshi Hibi

Keita Suzuki

Misa Iwamoto

Kazutoshi Tonozuka

Masaru Kawachi

Kazuo Miyashita

Kim Seokjin

Kazuya Osada

Kazuhiko Takishima

Kenjirou Mizumoto

A light control deviceincludes a pair of electrodesandand a stacked structure body' of a plurality of light control layerssandwiched by the pair of electrodesand; and each light control layerhas a stacked structure of a first insulating layer, a first nanocarbon filmdoped with an n-type impurity or not doped with an impurity, a second insulating layer, and a second nanocarbon filmdoped with a p-type impurity or not doped with an impurity.

Light control device, imaging element, and imaging device, and light transmittance control method for light control device

The present disclosure relates to an imaging apparatus comprising an image sensor that includes an imaging surface in which many pixels are arranged vertically and horizontally, a pixel control unit that controls the image sensor, selects a pixel corresponding to a sampling function among pixels configuring a block by applying the sampling function for each block acquired by partitioning the imaging surface of the image sensor into a plurality of blocks, and outputs a sampling signal based on a pixel value of the selected pixel, and a reduced image generating unit that generates a reduced image on the basis of the sampling signal for each block output from the image sensor.

Imaging apparatus which performs compressive sensing reading data for a partitioned block output from an image sensor

An imaging device includes imaging elementsarranged in two-dimensional matrix in a first direction and a second direction, an analog-digital (AD) converter, and a pixel signal reading device. The pixel signal reading deviceselects spatially at random the imaging elementthat outputs a pixel signal to the AD converter, and randomly outputs the pixel signal of the imaging elementfrom the AD converter

Imaging device and pixel signal reading method

A light control device according to the present disclosure includes: stacked M (provided that M&#x2265;1) light control layersM in each of which a first nanocarbon film, a first intermediate layerA, a dielectric material layer, and a second intermediate layerB are stacked; and a second nanocarbon filmformed on the second intermediate layerB included in an M-th light control layerM. A voltage is applied to the first nanocarbon filmand the second nanocarbon film

Light control device with stacked light control layers

Presence or absence of a photon is accurately detected in an image sensor with a simple configuration. A pixel circuit generates as an input voltage a signal voltage by photoelectrically converting light when the light is incident, and generates as the input voltage a predetermined reset voltage when light is not incident. A capacitor retains the predetermined reset voltage as a retained voltage. An amplification comparator amplifies a voltage difference between the input voltage and the retained voltage. A detection comparator outputs a result of determining whether or not the amplified voltage difference is higher than a predetermined value, as a detection signal indicating detected presence or absence of light incidence.

Image sensor and imaging apparatus

A vapor separator in an embodiment is arranged between a first space and a second space, and is used to allow vapor existing in the first space to permeate the second space by making a vapor pressure in the second space lower than a vapor pressure in the first space. The vapor separator in the embodiment includes: a porous body having a first face, a second face opposite to the first face, and fine pores passing from the first face to the second face; and a soluble absorbent existing in the fine pores of the porous body.

Vapor separator and dehumidifier using the same

The soft magnetic material of embodiments includes flattened magnetic metal particles including at least one magnetic metal selected from iron (Fe), cobalt (Co) and nickel (Ni), each of the flattened magnetic metal particles having a thickness of from 10 nm to 100 &#x3bc;m, an aspect ratio of from 5 to 10,000, and a lattice strain of from 0.01% to 10%, and being oriented with magnetic anisotropy in one direction within aligned flattened surface; and an interposed phase existing between the flattened magnetic metal particles and including at least one of oxygen (O), carbon (C), nitrogen (N) and fluorine (F).

Soft magnetic material, rotating electric machine, motor, and generator

Dark current of FD is eliminated in an image sensor, and conversion efficiency of converting electric charge to voltage is improved. A pixel circuit includes a photoelectric conversion portion, a control transistor, and an electric charge accumulation portion. The photoelectric conversion portion converts light incident along an optical axis to electric charge. The control transistor controls output voltage according to input voltage. The electric charge accumulation portion accumulates electric charge in a region positioned between the control transistor and the photoelectric conversion portion on the optical axis, and supplies a voltage according to the amount of accumulated electric charge as the input voltage to the control transistor.

Pixel circuit and imaging apparatus

Provided is an imaging element including: a light receiving elementand a stacked structure bodythat is placed on a light incident side of the light receiving elementand in which a semiconductor layerand a nanocarbon filmto which a prescribed electric potential is applied are stacked from the light receiving element side. The semiconductor layeris made of a wide gap semiconductor with an electron affinity of 3.5 eV or more, or is made of a semiconductor with a band gap of 2.0 eV or more and an electron affinity of 3.5 eV or more.

Imaging element and imaging device

A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Solid-state imaging device, driving method thereof and electronic apparatus

A solid-state image capturing device including: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Solid-state image capturing device and electronic device

A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Solid-state imaging device and electronic equipment

A metal-containing particle aggregate of an embodiment of the present invention includes a plurality of core-shell particles. Each of the core-shell particles includes: a core portion that contains at least one magnetic metal element selected from the first group consisting of Fe, Co, and Ni, and at least one metal element selected from the second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare-earth elements, Ba, and Sr; and a shell layer that includes a carbon-containing material layer and an oxide layer that covers at least part of the core portion and includes at least one metal element that belongs to the second group and is contained in the core portion.

Metal-containing particle aggregate, metal-containing particle composite member, and method of manufacturing the aggregate and the composite member

Growing community of inventors

Kanagawa, Japan

Kouichi Harada