Tdk Corporation

Kouhei Ohhashi

Masahito Furukawa

Junichi Yamazaki

Masaru Nanao

Kenta Ishii

Taku Masai

Masamitsu Haemori

A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO.

Piezoelectric thin film-stacked body, piezoelectric thin film substrate, piezoelectric thin film device, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head, and ink-jet printer device

Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of BiMeO.

Piezoelectric composition and piezoelectric device

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Tokyo, Japan

Kouhei Ohhashi