Sumco Techxiv Corporation

Sumco Corporation

Kouhei Kawano

Kazuhiro Iriguchi

Takashi Fujikawa

Masayuki Ishibashi

Toshiyuki Isami

There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mmand a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.

Susceptor for vapor phase epitaxial growth device

A method for evaluating a shape change of a semiconductor wafer is provided. The method comprises acquiring unconstrained shape data of shape data of the semiconductor wafer being placed on a reference surface in a unconstrained state; acquiring constrained shape data of shape data of the semiconductor wafer being constrained along the reference surface in a constrained state; and comparing the unconstrained shape data and the constrained shape data. A method for manufacturing the semiconductor wafer utilizing a result of the evaluation of the wafer is also provided.

Growing community of inventors

Nagasaki, Japan

Kouhei Kawano