Canon Kabushiki Kaisha

Fuji Xerox Co., Ltd.

Kouhei Hashimoto

Seiichi Tamura

Aiko Kato

Masatsugu Itahashi

Ryuichi Mishima

Takehito Okabe

Hiroaki Naruse

Takahiro Hachisu

Koichiro Iwata

Jun Iba

Taro Kato

Takehiko Soda

Yasushi Nakata

Hiroo Akabori

Masayuki Tsuchiya

Atsushi Takeshita

Toru Hada

Goro Noda

Masahiko Harada

Mayu Ishikawa

Shinji Ota

Kohei Tanaka

Masatsuga Itahashi

Shota Shigemori

In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

Solid-state image pickup device image pickup system using solid-state image pickup device and method of manufacturing solid-state image pickup device

A solid-state image pickup device has an image pickup pixel including a first photoelectric conversion portion and a first transistor and a focus detection pixel including a second photoelectric conversion portion, a second transistor, and a light shielding portion, in which a reflection preventing portion is provided on the underface side of the light shielding portion.

Solid-state image pickup device and image pickup system having light shielding portion with first and second films on respective under face and upper face sides

Solid-state image pickup device, image pickup system using solid-state image pickup device, and method of manufacturing solid-state image pickup device

A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.

Solid-state image sensor and camera with pixel openings

An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.

Solid-state image sensor

Solid-state image pickup device and image pickup system

A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.

Method for manufacturing solid-state image pickup device

A solid-state imaging device includes a photoelectric converting portion including a first semiconductor region capable of accumulating a signal charge, a second semiconductor region of the same conductivity type as the first semiconductor region, a gate electrode provided between the first and second semiconductor regions, and an insulating layer provided on the first semiconductor region, the second semiconductor region, and the gate electrode. The solid-state imaging device further includes a first light-shielding portion including a metal portion provided in an opening or a trench of the insulating layer between the first and second semiconductor regions, and a second light-shielding portion including a metal portion provided on the insulating layer on the second semiconductor region.

Solid-state imaging device and image capturing system

In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.

Photoelectric conversion apparatus and method of manufacturing photoelectric conversion apparatus

In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.

Method of manufacturing photoelectric conversion device

A method for manufacturing a semiconductor device that includes a semiconductor substrate, the method comprises: a first irradiation step of irradiating a first irradiated region with a focused ion beam so as to selectively remove a first portion corresponding to the first irradiated region of the wiring pattern, the first irradiated region being positioned on an inner side of a short defect portion of the wiring pattern in a direction along a plane parallel to the principal surface; and a second irradiation step of, after the first irradiation step, irradiating a second irradiated region with a focused ion beam so as to remove a second portion corresponding to the second irradiated region of the wiring pattern, the second irradiated region including a region that is positioned on an outer side of the short defect portion in the direction along the plane parallel to the principal surface.

Semiconductor device manufacturing method

The controlling apparatus is provided with: a memory that stores application software; a setting part that sets an operational manner related to power consumption of an apparatus running the application software, corresponding to the application software stored in the memory; and a controller that controls the power consumption of the apparatus according to the operational manner set by the setting part.

Growing community of inventors

Kawasaki, Japan

Kouhei Hashimoto