Nippon Telegraph and Telephone Public Corporation

Nippon Telegraph and Telephone Corporation

Ntt Fanet Systems Corporation

Kou Wada

Masahiro Yoshizawa

Akira Kikuchi

Nobuo Shimazu

Minpei Fujinami

Kenichi Saito

Masao Sakata

Tadashi Mori

Toshihiko Odagiri

A cable cutting apparatus incorporating a mechanism for preventing the erroneous cutting of the cables in use, which is both inexpensive and simple. This cable cutting apparatus includes a cutting mechanism having cutting blades for cutting a cable; a core potential recognition unit for recognizing a potential of the cutting blades brought into contact with a core of the cable as one of a potential for a cable in use and a potential for a cable out of use; and a locking mechanism for locking cutting movements of the cutting blades of the cutting mechanism whenever the core potential recognition unit recognizes the potential of the cutting blades in contact with the core of the cable as the potential for a cable in use.

Cable cutting apparatus with mechanism for preventing erroneous cable

A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated includes leakage characteristics and a capacitance.

Method and apparatus for evaluating the capacitance of an integrated

A charged beam radiation apparatus includes an auxiliary charged beam emitting mechanism, a main charged beam emitting mechanism, a secondary electron detector, and a computer as a controller. The auxiliary charged beam emitting mechanism emits an auxiliary charged beam of a given acceleration voltage onto a predetermined portion of an electronic device to be measured. The main charged beam emitting mechanism emits a main charged beam of an acceleration voltage lower than that of the auxiliary charged beam onto the predetermined portion and the vicinity of the predetermined portion. The secondary electron detector detects secondary electrons generated from a portion irradiated by the main charged beam. The controller measures a change in a secondary electron signal from the secondary electron detector.

Charged beam radiation apparatus

A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated include leakage characteristics and a capacitance.

Method and apparatus for testing integrated electronic device

Observing a surface using a charged particle beam

In a characteristic test apparatus for an electronic device, a number of voltage supply beams are radiated onto predetermined irradiation positions of the electronic device placed on a sample table. In addition, a potential measuring beam is radiated onto a number of irradiation positions including the predetermined irradiation positions of the voltage supply beams. A secondary electron signal based on the potential measuring beam is detected to measure a potential. When the irradiation position of the potential measuring beam coincides with that of the voltage supply beam, the voltage supply beam is controlled to adjust a potential at the irradiation position to a set value by controlling, e.g., an acceleration power source for the voltage supply beam. When the irradiation position of the potential measuring beam is different from that of the voltage supply beam, a potential at this position is measured. Then, characteristics of the electronic device are calculated based on the obtained potentials at the respective irradiation positions.

Growing community of inventors

Tokyo, Japan

Kou Wada