Tokyo Electron Limited

Kotaro Tsurusaki

Kouzou Kanagawa

Koji Yamashita

Yoshihiro Kai

Keiji Onzuka

Takayuki Toshima

Hiroshi Tanaka

Naoki Shindo

Koji Tanaka

Kazuya Koyama

Yuji Kamikawa

Hiroshi Yano

Osamu Kuroda

Hiroki Taniyama

Kazuyoshi Eshima

Tsukasa Hirayama

Hidemasa Aratake

Kouji Ogura

Keita Hirase

Yusuke Yamamoto

Teruaki Konishi

Hidetoshi Nakao

Atushi Yamashita

A substrate processing system includes: a loading/unloading part into/from which a cassette that accommodates a plurality of substrates is loaded/unloaded; a batch-type processing part configured to collectively process a lot including the plurality of substrates; a single-substrate-type processing part configured to the plurality of substrates of the lot one by one; and an interface part configured to deliver the plurality of substrates between the batch-type processing part and the single-substrate-type processing part, wherein the loading/unloading part, the single-substrate-type processing part, the interface part, and the batch-type processing part are arranged in this order, and wherein the interface part comprises a lot formation part configured to form the lot, and a transfer part configured to transfer the plurality of substrates from the single-substrate-type processing part to the lot formation part, and configured to transfer the plurality of substrates from the batch-type processing part to the single-substrate-type processing part.

Substrate processing system and substrate processing method

A substrate processing apparatus includes a processing tank, a holder, an organic solvent supply, a drainage port, a gas supply, and an exhaust port. The processing tank stores an aqueous layer. The holder holds a substrate. The organic solvent supply supplies an organic solvent onto the aqueous layer to form a liquid layer of the organic solvent. The drainage port discharges the aqueous layer from a bottom wall of the processing tank and causes the liquid layer of the organic solvent to descend from above the substrate to below the substrate. The gas supply supplies a gas of a water repellent agent to the liquid layer from above the processing tank while the liquid layer descends. The exhaust port is exposed on a side wall of the processing tank by the descending of the liquid layer and discharges the gas of the water repellent gas.

Substrate processing apparatus for supplying gas of water repellent agent and substrate processing method

A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

There is provided a substrate processing apparatus including: a processing part configured to process a substrate with a processing liquid; and a processing liquid generation part configured to generate the processing liquid supplied to the processing part. The processing liquid generation part includes: a reservoir configured to store the processing liquid; a circulation line through which the processing liquid stored in the reservoir is circulated; a heater configured to heat the processing liquid; and a nozzle provided at a downstream side of the circulation line and has at least one ejection port formed to eject the processing liquid heated by the heater from above a liquid level of the processing liquid stored in the reservoir.

Substrate processing apparatus and processing liquid concentration method

A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.

Substrate processing apparatus, substrate processing method, and storage medium

A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates exposed from the liquid surfaces. The controller moves up the ejection position of the vapor of the organic solvent by the ejection unit as the plurality of substrates are moved up.

A plurality of process liquid supply nozzlesare arranged at different levels on right and left sides of a semiconductor wafer W in a process bath. A discharge port of each of the nozzlesis directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzlesselected from the plurality of nozzles. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle, for example, and thereafter, the nozzleson the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bathwith a rinse liquid, the rinse liquid is discharged from the lowermost nozzleat first, for example. Thereafter, the rinse liquid is discharged from all the nozzles. In this manner, efficiency and uniformity in the liquid treatment can be improved.

Liquid treatment method and storage system

A substrate processing systemcomprises: a processing tankfor processing substrates W with a processing liquid; a drying unitdisposed above the processing tank; and a carrying mechanismfor carrying the substrates W between the processing tankand the drying unit. A processing gas supply linefor supplying a processing gas into the drying unitand inert gas supply linesandfor supplying an inert gas into the drying unitare connected to the drying unit. A first discharge line for discharging an atmosphere purged from the drying unitand a second discharge linefor forcibly exhausting the drying unitare connected to the drying unit

Substrate processing system, substrate processing method, recording medium and software

The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

Substrate drying processing apparatus, method, and program recording medium

A washing/drying process apparatus comprises a spin chuck for holding a substrate such that a surface thereof to be processed faces upward and for rotating the substrate, a process fluid supply mechanism for selectively supplying one or two or more of a plurality of kinds of process fluids to the surface to be processed of the substrate rotated by the spin chuck, the process fluid supply mechanism having a first nozzle with a discharge port for discharging a process fluid which is in a liquid phase under conditions of room temperature and atmospheric pressure, and a second nozzle with a discharge port for discharging fluid which is in a gas phase under conditions of room temperature and atmospheric pressure, a driving mechanism for simultaneously moving the first and second nozzles to a location above the substrate held by the spin chuck, and a controller for controlling operations of the process liquid supply mechanism and the driving mechanism.

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Tosu, Japan

Kotaro Tsurusaki