Hosiden Electronics Co., Ltd.

Hosiden Electronics, Ltd.

Kotaro Okamoto

Shigeo Aoki

Katsumi Miyake

Yasuhiro Ugai

A liquid crystal display device comprises, a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display electrode and source electrode, a gate insulating film is formed on the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers. A channel is thus obtained between the ohmic layers with its length determined by the length of the gate electrode.

Method of manufacturing liquid crystal display device

A liquid crystal display device comprises a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics, each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display layer and source electrode, a gate insulating film is formed on the semiconductor electrode, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers. A channel is thus obtained between the ohmic layers with its length determined by the length of the gate electrode.

Liquid crystal display device and method of manufacturing the same

Forming an opaque metal layer in a liquid crystal display

An impurity-doped amorphous silicon semiconductor layer is deposited on a substrate, source and drain electrodes are deposited apart from each other on the amorphous silicon semiconductor layer in ohmic contact therewith and a gate electrode is deposited on the amorphous silicon semiconductor layer in Schottky contact therewith between the source and drain electrodes, thereby forming a thin film transistor.

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Hino, Japan

Kotaro Okamoto