Panasonic Corporation

Kotaro Nomura

Makoto Tsutsue

A semiconductor device includes: a semiconductor substrate; a first insulating film (third insulating film) formed on the semiconductor substrate, having a first trench (second interconnect trench), and having a composition ratio varying along the depth from an upper face of the first insulating film; and a first metal interconnect (second metal interconnect) filling the first trench (second interconnect trench). The mechanical strength in an upper portion of the first insulating film (third insulating film) is higher than that in the other portion of the insulating film (third insulating film).

Method for fabricating a semiconductor device that includes processing an insulating film to have an upper portion with a different composition than an other portion

By covering inner surfaces of a wiring grooveand a via holewith a fourth insulation filmcontaining porogen during a manufacturing process of a semiconductor device, an increase in the relative permittivity of the fourth insulation filmthat is a low-permittivity film on the inner surfaces of the wiring grooveand the via holecan be suppressed in a manufacturing process of a semiconductor device such as a barrier metal sputtering process.

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Toyama, Japan

Kotaro Nomura