Jx Nippon Mining Metals Corporation

Jx Nippon Mining & Materials Corporation

Jx Metals Corpo Tion

Kotaro Nagatsu

Shinichiro Senda

Yasuhiro Yamakoshi

Shuhei Murata

Yuki Yamada

Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life. In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.5 or less, and the {111} area ratio of each of the upper, central and lower portions is determined by dividing a cross section of a plate-shaped sputtering target perpendicular to a sputtering surface into three equal portions: the upper portion, the central portion and the lower portion from a sputtering surface side in a normal direction of the sputtering surface at an intermediate position between a center and an outer circumference of the sputtering surface of the plate-shaped sputtering target, and measuring a crystal orientation distribution of each of measured regions of the upper portion, the central portion, and the lower portion using an EBSD method:the {111} area ratio=total area of crystal grains having a {111} plane oriented in the normal direction in the measured regions/total area of the measured regions  Equation (1);the rate of change=[maximum value−minimum value]/minimum value  Equation (2).

Niobium sputtering target

Provided is a tantalum sputtering target that contributes to improvement of film thickness uniformity during a high-power sputtering. A tantalum sputtering target having a purity of 99.99% by mass or more and an average value of Vickers hardness on a sputtering surface of from 85 to 110 Hv, the tantalum sputtering target satisfying both of the following conditions (1) and (2):

Tantalum sputtering target

A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.

Sputtering target

Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a target, is observed via an electron backscatter diffraction pattern method, an area ratio of crystal grains of which a {100} plane is oriented in the ND is 30% or more. An object of the present invention is to provide a tantalum sputtering target in which a deposition rate can be appropriately controlled under high-power sputtering conditions. When sputter-deposition is performed using this kind of a tantalum target, it is possible to form a thin film having superior film thickness uniformity and improve the productivity of the thin film formation process, even for micro wiring.

Tantalum sputtering target, and production method therefor

Provided is a tantalum sputtering target, which includes an area ratio of crystal grains of which a {111} plane is oriented in a direction normal to a rolling surface (ND) is 35% or more when the ND, which is a cross section orthogonal to a sputtering surface of a target, is observed via Electron Backscatter Diffraction Pattern method. The object of the present invention is to provide a tantalum sputtering target in which a sputtered material can be uniformly deposited on a wafer surface under high-power sputtering conditions by increasing the straightness of the sputtered material. By using this kind of tantalum target for sputter-deposition, it is possible to improve the film thickness uniformity and the throughput of deposition even for fine wiring.

A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less. By controlling the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.

Tantalum sputtering target and method for producing same

A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an average crystal grain size is 50 &#x3bc;m or more and 150 &#x3bc;m or less, and a variation in a crystal grain size is 30 &#x3bc;m or less. A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less, an average crystal grain size is 50 &#x3bc;m or more and 150 &#x3bc;m or less, and a variation in a crystal grain size is 30 &#x3bc;m or less. By controlling the crystal grain size of the target, or the crystal grain size and the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.

The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal.

Sputtering target-backing plate assembly

Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 &#x3bc;m or more and 200 &#x3bc;m or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance).

Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target

A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70% or less, an orientation rate of a (222) plane is 10% or more, an average crystal grain size is 50 &#x3bc;m or more and 150 &#x3bc;m or less, and a variation in a crystal grain size is 30 &#x3bc;m or less. By controlling the crystal orientation of the target, it is possible to increase the sputter rate, consequently deposit the required film thickness in a short period of time, and improve the throughput. In addition, by controlling the crystal grain size on the sputtering surface of the target, an effect is yielded in that the abnormal discharge during sputtering can be suppressed.

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Ibaraki, Japan

Kotaro Nagatsu