Tokyo Electron Limited

Kotaro Miyatani

Toshihisa Nozawa

Kaoru Maekawa

Yasuo Kobayashi

Kohei Kawamura

Shigeru Kasai

Takaaki Matsuoka

Yutaka Fujino

Akira Tanihara

Takuya Kurotori

Toshiyasu Hori

Kenichi Kote

Shigekazu Hirose

In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Method for forming insulating film and method for manufacturing semiconductor device

An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.

Etching method and recording medium

A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CFgas (here, a is a counting number, and b is a counting number which satisfies an equation of 'b=2&#xd7;a&#x2212;2'), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

Plasma processing method for forming a film and an electronic component manufactured by the method

A processing method and apparatus for removing a native oxide film from the surface of a subject to be treated, wherein plasma is generated from N and H gases and then activated to form an activated gas species, NF gas is added to the activated gas species to generate an activated gas of these three gases, the subject is cooled to not higher than a predetermined temperature by a cooling means, gas generated from the N , H and NF gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film, the reactive film is sublimated and thus the native oxide film is removed if the subject is heated to a given temperature; a cluster system which includes the above apparatus and other apparatuses and which is capable of carrying a subject to be treated in an unreactive atmosphere.

Processing method and apparatus for removing oxide film

Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N , H and NF gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film. If the subject is heated to a given temperature, the reactive film is sublimated and thus the native oxide film is removed. Plasma is generated from the N and H gases and then activated to form an activated gas species. The NF gas is added to the activated gas species to generate an activated gas of these three gases. In the step of forming the reactive film, the subject is cooled to not higher than a predetermined temperature by a cooling means. In the step of sublimating the reactive film, the subject is lifted up to a predetermined heating position. Also disclosed is a cluster system which includes the treatment apparatus of the present invention and other apparatuses and which is capable of carrying a subject to be treated in an unreactive atmosphere.

Growing community of inventors

Yamanashi, Japan

Kotaro Miyatani