Mitsubishi Denki Kabushiki Kaisha

Nippon Telegraph and Telephone Corporation

Kotaro Mitsui

Nobuyoshi Ogasawara

Susumu Yoshida

Takao Oda

Mari Kato

Takahiko Oohara

Takashi Nishimura

Norio Hayafuji

Hirotaka Kizuki

Yuji Ohkura

Akihiro Takami

Seiji Ochi

Yoshinori Yukimoto

Kazuo Mizuguchi

Manabu Katoh

Mari Tsugami

Masaaki Usui

Yoshiro Ohmachi

Yoshiaki Kadota

Zenpei Kawazu

In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.

Infrared detector having active regions and isolating regions formed of

A method for manufacturing a solar cell which includes at least a first GaAs layer of a first conductivity type and a second GaAs layer of a second conducitivity type sequentially formed on a first main surface of an Si substrate of the first conductivity type, a first electrode formed on a second main surface opposite to the first main surface of the Si substrate and a second electrode formed on the second GaAs layer. The method includes a first step of forming a layer comprising a material having a thermal expansion coefficient smaller than that of Si on the second main surface of the Si substrate at a temperature close to room temperature and a second step of sequentially forming the first and second GaAs layers on the first main surface of the Si substrate.

Manufacturing a gallium arsenide solar cell on a silicon substrate

A photovoltaic semiconductor device includes a first conductivity type silicon substrate having a first main surface, a first conductivity type compound semiconductor layer disposed on a first, major portion of the first main surface of the silicon substrate, a second conductivity type compound semiconductor layer disposed on the first conductivity type compound semiconductor layer, a first electrode connected to the second conductivity type compound semiconductor layer, a portion of the first electrode being disposed on a second, minor portion of the first main surface of the silicon substrate with an intervening insulating film, and a second electrode disposed on a third, minor portion of the first main surface of the silicon substrate.

Photovoltaic semiconductor device

A light responsive semiconductor includes a second conductivity type semiconductor substrate, a photoelectric conversion layer comprising semiconductor layers having a pn junction, which is disposed on the second conductivity type semiconductor substrate, a buffer layer comprising a second conductivity type semiconductor layer having a larger energy band gap than that of the photoelectric conversion layer. The element further includes a light reflection layer comprising a semiconductor layer which is disposed between the second conductivity type semiconductor substrate and the buffer layer. Alternatively, a light reflection layer which is a buffer layer is disposed between a photoelectric conversion layer and a semiconductor substrate.

Light responsive heterojunction semiconductor pn element

A solar cell includes a semiconductor substrate of one conductivity type, at least one separation region of opposite conductivity type extending through the substrate, a first semiconductor layer disposed on the front of the substrate, an opposite conductivity type second semiconductor layer disposed on the first layer to form a rectifying junction, the second layer being in electrical communication with the separation region, a first electrode disposed on the rear surface of the substrate and a second electrode in electrical communication with the second layer and extending to the rear of the substrate. The solar cell may be made by diffusing the separation region in the substrate, epitaxially growing the first and second layers successively on the front of the substrate, establishing electrical communication between the second layer and the separation region at the front, and forming the first and seocnd electrodes. The solar cell has both electrodes on the rear surface, more than one of the solar cells can be made from a single substrate, and the depth of the rectifying junction can be controlled, all producing cells suitable for space applications.

Solar cells and method for producing solar cells

An antireflective film (7, 8) for photoelectric devices comprises at least a layer having a refractive index being the largest on the side abutting on the light receiving surface (2a) or the light emitting surface of a photoelectric device and continuously decreasing according to the distance outward from said side.

Antireflective film for photoelectric devices and manufacturing method

Antireflective film for photoelectric devices

In a hetero-face type solar cell, an impurity concentration distribution is formed in the cell element so as to provide an accelerative electric field therein. As a result, electrons are accelerated by the field toward the PN junction, and even under the application of radiation to the cell, a highly efficient solar cell may be achieved.

Hetero-face solar cell and method of manufacturing the same

Growing community of inventors

Itami, Japan

Kotaro Mitsui