Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Kotaro Hosoya

Yoshihiro Takahoko

Mitsuhiro Nakamura

Kenji Aoki

Isao Nagaoki

Kunji Shigeto

Yoshihiko Nakayama

Tsutomu Saitou

Akinari Morikawa

Haruhiko Hatano

Masaomi Ohno

To provide a charged particle beam apparatus. The charged particle beam apparatus includes: a stage on which a sample is placed; a cleaner configured to remove a contaminant on the sample; and a stage control unit configured to adjust a relative positional relationship between the cleaner and the sample by moving the stage during use of the cleaner.

Charged particle beam apparatus and cleaning method

According to one embodiment, a holder includes a top member, a side member, and a bottom member. The top member has a hole for allowing transmission of a charged particle beam, and the sample is mountable in the hole. The bottom member is provided to overlap with the top member in a plan view. The side member is connected to a part of the top member and a part of the bottom member such that the top member and the bottom member are separated from each other in a cross-sectional view. An opening portion is a region surrounded by the top member, the side member, and the bottom member, and a scintillator is provided in the opening portion.

Holder and charged particle beam apparatus

The objective of the present invention is to provide a charged particle beam device, wherein the positional relationship between reflected electron detection elements and a sample and the vacuum state of the sample surroundings are evaluated to select automatically a reflected electron detection element appropriate for acquiring an intended image. In this charged particle beam device, all the reflected electron detection elements are selected when the degree of vacuum inside the sample chamber is high and the sample is distant from the reflected electron detectors, while a reflected electron detection element appropriate for acquiring a compositional image or a height map image is selected when the degree of vacuum inside the sample chamber is high and the sample is close to the reflected electron detectors. When the degree of vacuum inside the sample chamber is low, all the reflected electron detection elements are selected.

Charged particle beam device and charged particle beam device control method

The present invention makes it possible, even when using an ordinary electron beam device (not an environment-controlled electron beam device), to create locally a low vacuum condition in the vicinity of a sample and cool said sample by means of a sample holder alone, without modifying the device or adding equipment such as a gas cylinder. The sample to be observed is placed in a sample holder provided with: a vessel that can contain a substance to serve as a gas source; and a through-hole in the bottom of a sample mount on said vessel. Via the through-hole, gas evaporating or volatilizing from the vessel is supplied to the sample under observation, thereby creating a localized low-vacuum state at or in the vicinity of the sample. Also, the heat of vaporization required for volatilization can be used to cool the sample.

Electron microscope sample holder and sample observation method

Sample holder for an electron microscope

Using, as a detector, a CCD detector having a CCD element to which a scintillator is closely fixed, a backscattered or scanning transmission image is obtained by the following method. The detector is disposed directly under an objective lens to obtain the backscattered electron image. When one point of a specimen is irradiated with an electron beam, backscattered or transmission electrons generated from the specimen collide with the scintillator to form a luminescent pattern. This pattern is detected by the CCD detector, and stored in a memory. This processing is sequentially repeated for each irradiation position to obtain all the patterns in an electron beam scanning range. Arithmetic processing is performed on each pattern to convert it into an image. Usually, image data for one pixel is calculated from one pattern. By sequentially repeating this, a backscattered or transmission electron image in the electronic beam scanning range can be obtained.

Growing community of inventors

Tokyo, Japan

Kotaro Hosoya