Toshiba Memory Corporation

Kioxia Corporation

Toshiba Memory Coporation

Kotaro Fujii

Shinya Arai

Jun Fujiki

Hideaki Aochi

Masaru Kito

Fumitaka Arai

Satoshi Nagashima

Takashi Ishida

Yumi Nakajima

Yasuhiro Uchiyama

Shinya Watanabe

Takayuki Kashima

Hiroyuki Yamasaki

Kohei Nyui

According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer.

Semiconductor device with bonded substrates

A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.

Semiconductor memory device and method for manufacturing same

A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.

According to one embodiment, a semiconductor memory device includes: a first insulating layer provided between first and second interconnection layers; a first semiconductor layer provided between the first interconnection layer and the first insulating layer; a second semiconductor layer provided between the second interconnection layer and the first insulating layer; a first charge storage layer provided between the first interconnection layer and the first semiconductor layer; a second charge storage layer provided between the second interconnection layer and the second semiconductor layer; and a second insulating layer provided between the first interconnection layer and the second interconnection layer, between the first semiconductor layer and the second semiconductor layer, and between the first charge storage layer and the second charge storage layer.

Semiconductor memory device and semiconductor device manufacturing method

A semiconductor memory device includes a first electrode film, a second electrode film separated from the first electrode film in a first direction, a third electrode film separated from the second electrode film in the first direction, a fourth electrode film separated from the third electrode film in the first direction, and a first and a second semiconductor members extending in the first direction. The second electrode film includes a first conductive portion, an insulating portion, and a second conductive portion arranged along a second direction. The first semiconductor member pierces the first, third and fourth electrode films and the insulating portion of the second electrode film. The second semiconductor member pierces the first, third and fourth electrode films, and the first conductive portion or the second conductive portion of the second electrode film.

Semiconductor memory device including artificial drain select gate and method for driving same

According to one embodiment, a semiconductor storage device includes a stacked body, a first semiconductor layer extending in the stacked body, a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer, a second conductor layer disposed above the stacked body, a second semiconductor layer extending through the second conductor layer, a third conductor layer disposed between the second semiconductor layer and the second conductor layer, a first insulator layer disposed above the third conductor layer, and a second insulator layer including a first portion disposed between the second semiconductor layer and the third conductor layer and a second portion disposed between the second semiconductor layer and the first insulator layer. A diameter of the second insulator layer is larger in the second portion than in the first portion.

Semiconductor storage device and method of manufacturing semiconductor storage device

The memory string comprises: a first semiconductor layer; a stacked body in which a plurality of conductive layers and a plurality of interlayer insulating layers are stacked along a first direction above the first semiconductor layer; and a second semiconductor layer having a longitudinal direction along the first direction and provided above the first semiconductor layer. The memory insulating layer includes a charge accumulation layer between the second semiconductor layer and the plurality of the conductive layers. The core insulating layer has a longitudinal direction along the first direction, and is provided in the second semiconductor layer. The oxide film layer is provided between the core insulating layer and the second semiconductor layer.

Semiconductor memory device and method of manufacturing the same

According to one embodiment, a semiconductor device includes a first interconnection, a first semiconductor region, a stacked body, a columnar portion, first insulators, and arrays. The first interconnection is provided on a substrate via a first insulating film interposed. The first semiconductor region is provided on the first interconnection via a second insulating film. The stacked body is provided on the first semiconductor region. The columnar portion is provided in the stacked body. The first insulators are provided in the stacked body. The first insulators extend in the stacking direction and a first direction crossing the stacking direction. The arrays are provided in the first semiconductor region. The arrays each include second semiconductor regions. The second semiconductor regions are separated from each other. The second semiconductor regions are provided under the first insulators. The second semiconductor regions are electrically connected to the first interconnection.

Growing community of inventors

Yokkaichi, Japan

Kotaro Fujii