Tokyo Ohka Kogyo Co., Ltd.

Promerus, Lcc

Tokyo Ohka Co., Ltd.

Kotaro Endo

Masaaki Yoshida

Toshiyuki Ogata

Tomoyuki Hirano

Hideo Hada

Yoshiyuki Utsumi

Keita Ishiduka

Hiromitsu Tsuji

Mitsuru Sato

Takahiro Dazai

Akiya Kawaue

Junichi Tsuchiya

Tsuyoshi Kurosawa

Takashi Nagamine

Yuta Iwasawa

Keita Ishizuka

Larry Funderburk Rhodes

Daiju Shiono

Hiroshi Komano

Takehiro Seshimo

Tasuku Matsumiya

Pramod Kandanarachchi

Makiko Irie

Yasuhiro Yoshii

Hideto Nito

Tomoyuki Ando

Chun S Chang

Lawrence D Seger

Masafumi Fujisaki

Miki Shinomiya

Tsuyoshi Nakamura

Takeshi Iwai

Kazumasa Wakiya

Yuichi Suzuki

Fumitake Kaneko

Taku Hirayama

Daisuke Kawana

Kensuke Matsuzawa

Ryoichi Takasu

Syogo Matsumaru

Takehito Seo

Tomovuki Hiranoa

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1), a constitutional unit (a02) represented by Formula (a0-2), and a constitutional unit (a03) which is represented by Formula (a0-3) and has a structure different from the constitutional unit (a02). 

Resist composition and method of forming resist pattern

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1) and a constitutional unit (a1) which comprises an acid-decomposable group whose polarity is increased due to an action of an acid, and the constitutional unit (a1) comprises a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-1) and a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-2). 

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1), wherein Zrepresents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and Mrepresents an organic cation having a valency of m.Z(M)&#x2003;&#x2003;(d1)

Resist composition, method of forming resist pattern, compound, and acid diffusion control agent

A polymeric compound including a structural unit (a0) represented by general formula (a0-1) shown below and a polycyclic group-containing structural unit (a2m) other than the structural unit (a0), the structural unit (a2m) containing a lactone-containing polycyclic group, a &#x2014;SO-containing polycyclic group or a carbonate-containing polycyclic group, and a resist composition including the same: wherein Rrepresents a hydrocarbon group of 1 to 6 carbon atoms which may have a substituent, or a hydrogen atom; Yarepresents a single bond or a divalent linking group; L represents an ester bond; and Rarepresents a polycyclic group having a bridged ring polycyclic skeleton or a condensed ring polycyclic skeleton, which has in its skeleton &#x2014;C(&#x2550;O)O&#x2014; or &#x2014;SO&#x2014;, and at least one of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group.

Resist composition, method of forming resist pattern, and polymeric compound

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component including a compound (B0-1) represented by general formula (b0) shown below in which Rarepresents an aromatic ring; Rarepresents an alkyl group of 5 or more carbon atoms optionally having a substituent; Raand Raeach independently represents an alkyl group of 1 to 10 carbon atoms optionally having a substituent; n1 represents an integer of 1 to 5; n2 represents an integer of 0 to 2; n3 represents an integer of 0 to 4; and Xrepresents a counteranion. 

Resist composition, method of forming resist pattern, acid generator, photoreactive quencher, and compound

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, an acid generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound component (D), wherein the acid generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below, and the nitrogen-containing organic compound component (D) includes a compound (D1) represented by general formula (d1) shown below. In the formula, Yrepresents an alkylene group of 1 to 4 carbon atoms which may have a substituent, Rrepresents an alkyl group, alkoxy group, halogen atom, halogenated alkyl group, hydroxyl group or oxygen atom (&#x2550;O), p represents 0 or 1, and Zrepresents an organic cation. 

Resist composition, method of forming resist pattern

A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula.

Method for forming resist pattern

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) and a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid (Rrepresents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; W represents &#x2014;COO&#x2014;, a &#x2014;CONH&#x2014; group or a divalent aromatic hydrocarbon group; Yand Yrepresent a divalent linking group or a single bond; R'represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R&#x2032;represents a monovalent aliphatic hydrocarbon group; and Rrepresents an &#x2014;SO&#x2014; containing cyclic group). 

A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %. 

Positive resist composition and method of forming resist pattern

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety comprising a group represented by general formula (I) (in the formula, Rrepresents an organic group having a carbonyl group, an ester bond or a sulfonyl group; and Q represents a divalent linking group). 

Resist composition, method of forming resist pattern, novel compound, and acid generator

Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.

Norbornene-type polymers, compositions thereof and lithographic processes using such compositions

The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90&#xb0; or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.

Material for forming resist protection films and method for resist pattern formation with the same

There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below:R&#x2014;CH&#x2014;O&#x2014;Y&#x2014;SOA&#x2003;&#x2003;(b1-12)

Compound, acid generator, resist composition, and method of forming resist pattern

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Kawasaki, Japan

Kotaro Endo