Nippon Steel Chemical & Material Co., Ltd.

Nippon Micrometal Corporation

Kota Shimomura

Tomohiro Uno

Daizo Oda

Tetsuya Oyamada

Ryo Oishi

Noritoshi Araki

Tadashi Yamaguchi

There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm) or more and 1.6 (μm/μm) or less.

Copper bonding wire for semiconductor devices and semiconductor device

There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, CuO, CuO and Cu(OH)on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH)(Cu[II]) corresponding to bivalent Cu to a percentage of CuO (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.

Copper bonding wire

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Saitama, Japan

Kota Shimomura