Mitsubishi Electric Corporation

Kota Kimura

Manami Noda

Tsuyoshi Osaga

Takaki Ito

An oxide film () is provided on an upper surface of the semiconductor substrate (). A guard ring () is provided on the upper surface of the semiconductor substrate (). An organic insulating film () directly contacts the oxide film () in a termination region () between the guard ring () and an outer edge portion of the semiconductor substrate (). A groove () is provided on the upper surface of the semiconductor substrate () in the termination region (). The groove () is embedded with the organic insulating film ().

Semiconductor device including groove in termination region

An IGBT (), a diode (), and a well region () are provided on a semiconductor substrate (). The IGBT () includes a trench gate () provided on the first principal surface of the semiconductor substrate (). The diode () includes a p-type anode layer () provided on the first principal surface of the semiconductor substrate (). The well region () includes a p-type well layer () provided on the first principal surface of the semiconductor substrate (), having an impurity concentration higher than that of the p-type anode layer (), and having a depth larger than that of the trench gate (). A terminal end of the trench gate () is surrounded by the p-type well layer (). The diode () is provided on an outer side of the IGBT () in the semiconductor substrate (). The well region () is provided on an outer side of the diode () in the semiconductor substrate ().

Semiconductor device comprising insulated gate bipolar transistor (IGBT), diode, and well region

A semiconductor device according to the present invention includes a substrate having an IGBT region, a diode region, and a high resistance region between the IGBT region and the diode region, a first electrode provided on an upper surface of the substrate and a second electrode provided on a back surface as a surface on an opposite side to the upper surface of the substrate, wherein in the high resistance region, a contact resistance between the upper surface of the substrate and the first electrode or a contact resistance between the back surface of the substrate and the second electrode is higher than in the diode region, and a width of the high resistance region is equal to or greater than a thickness of the substrate.

Semiconductor device

A gate electrode is formed in a trench formed in a semiconductor substrate. A gate interlayer insulating film is formed to cover the gate electrode and the like. A gate interconnection and an emitter electrode are formed in contact with the gate interlayer insulating film. A glass coating film and a polyimide film are formed to cover the gate interconnection and the emitter electrode. A solder layer is formed to cover the polyimide film. The gate interconnection and the emitter electrode are each formed of a tungsten film, for example.

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Tokyo, Japan

Kota Kimura