Rohm Co., Ltd.

Kota Ise

Koshun Saito

A semiconductor device includes a semiconductor element, a conductive member and a connecting member. The semiconductor element has a reverse surface formed with a first electrode and an obverse surface formed with a second electrode and a third electrode. The reverse surface and the obverse surface are spaced apart from each other in a z direction. Current flow between the first electrode and the second electrode is on-off controlled according to a first drive signal inputted to the third electrode. The conductive member has a first bond surface and a second bond surface each facing in the same direction as the reverse surface. The third electrode is bonded to the first bond surface. The connecting member is bonded to the second bond surface, and the second bond surface does not overlap with the semiconductor element as viewed in the z direction.

Semiconductor apparatus

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

Semiconductor device

Semiconductor module

A semiconductor device is provided with a semiconductor element, a main lead on which the semiconductor element is disposed, and a resin package that covers the semiconductor element and the main lead. A notch that is recessed toward the center of the main lead in plan view as seen in the thickness direction of the semiconductor element is formed in the main lead.

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Kyoto, Japan

Kota Ise