Renesas Electronics Corporation

Kosuke Yayama

Takashi Nakamura

Chiemi Hashimoto

Tomokazu Matsuzaki

Katsumi Tsuneno

Masaaki Iijima

Guoqiang Zhang

Hidekazu Tawara

A technique capable of detecting a substrate bias voltage at a low power consumption is provided. The technique including: a voltage boost circuit outputting a boost voltage based on a first clock signal having a first frequency; a voltage drop circuit outputting a drop voltage based on a second clock signal having a second frequency; and a logic circuit block comparing the first frequency and the second frequency and outputting a comparison result between the first frequency and the second frequency in accordance with predetermined criteria is provided.

Semiconductor device

A resistance element includes a conductor, the conductor having a repeating pattern of: a first conductive layer formed on a first interlayer insulating layer on a semiconductor substrate; a second conductive layer formed on a second interlayer insulating layer different from the first interlayer insulating layer; and an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the second conductive layer has a resistance-value fluctuation characteristic opposite to a resistance-value fluctuation characteristic of the first conductive layer after a heat treatment.

The polysilicon resistance has a large resistance variation rate after the end of the mold packaging process. In order to enable high-precision trimming, it is desired to realize a resistance which is hardly affected by stress and temperature fluctuation generated in a substrate by a mold packaging process. A resistance element is formed in a plurality of wiring layers, and has a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and a repeating pattern of an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the interlayer conductive layer is formed of a plurality of types of materials.

A polycrystalline silicon resistor is large in coefficient of fluctuation in resistance between before and after the completion of a package molding process. To enable highly accurate trimming, it is desired to implement a resistor that is hardly subjected to stress produced in a substrate during a package molding process. A resistance element is formed of a plurality of wiring layers and has a repetitive pattern of a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and an interlayer conductive layer coupling the first conductive layer and the second conductive layer together.

A semiconductor device includes a reference voltage generation circuit configured to generate reference voltages Va and Vb capable of adjusting a primary temperature characteristic, and an oscillation circuit configured to output an oscillation signal using the reference voltages Va and Vb, in which the oscillation circuit includes a frequency/current conversion circuit that is driven by the reference voltage Va and outputs a current Ie in accordance with a frequency of a feedback signal, a control voltage generation circuit configured to generate a control voltage in accordance with a potential difference between a voltage in accordance with the current Ie and the reference voltage Vb, a voltage control oscillation circuit configured to output the oscillation signal having a frequency in accordance with the control voltage, and a frequency division circuit configured to divide a frequency of the oscillation signal and output the resulting signal as the feedback signal.

Semiconductor device and control method of semiconductor device

Disclosed is a semiconductor device that suppresses stress-induced resistance value changes. The semiconductor device includes a resistance correction circuit. The resistance correction circuit includes a first resistor whose stress-resistance value relationship is a first relationship, a second resistor whose stress-resistance value relationship is a second relationship, and a correction section that controls the resistance value of a correction target resistor. The correction section detects the difference between the resistance value of the first resistor and the resistance value of the second resistor and corrects, in accordance with the result of detection, the resistance value of the correction target resistor.

Resistance correction circuit, resistance correction method, and semiconductor device

There is provided a semiconductor device which can provide desired output characteristics suitable to applications. A semiconductor deviceincludes a temperature sensing unitwhich generates an analog sensing signal corresponding to a temperature, and an AD converter unitwhich converts the analog sensing signal into a digital output signal corresponding to an adjusted temperature change rate based on a temperature change rate adjustment signal for adjusting the temperature change rate. The temperature change rate refers to a change in a detected temperature per bit of a digital output signal.

A frequency-locked loop circuit has a digital control oscillator that generates a clock, and an FLL controller that generates a frequency control code to control an oscillation frequency of the clock. The FLL controller has a frequency comparison unit and a delay code control unit. The frequency comparison unit compares a frequency of a clock generated by the digital control oscillator with a frequency of a multiplied reference clock. The delay code control unit generates, based on a comparison result of the frequency comparison unit, the frequency control code so that the frequency of the clock generated by the digital control oscillator matches the frequency of the multiplied reference clock. The frequency comparison unit determines the frequency of the clock by using first and second thresholds. The delay code control unit generates the frequency control code according to a determination of the frequency comparison unit.

Frequency-locked loop circuit and semiconductor integrated circuit

A clock signal capable of changing the frequency in a wide range and with high resolution is generated. An operational amplifier AMPis subject to feedback control so that the voltage of a positive input part equals that of a negative input part. The voltage of a circuit node fbck equals a reference voltage VREFI. A decoder DEC decodes control signals CNTand CNTand turns on one of transistors Tto T. This configuration provides feedback control so that the voltage of the circuit node fbck equals the reference voltage VREFI. This significantly reduces the on-resistances of the transistors Tto Tand prevents the degradation of the frequency accuracy.

Semiconductor device, with high-resolution and wide-range adjustable clock

A frequency-voltage converting circuitis composed of a switch unit including switches SWand SW, electrostatic capacitive elements C and Cto C, and switches CSWto CSW. The electrostatic capacitive elements Cto Care composed of elements having mutually different absolute values of capacitance and are provided so as to cover a frequency range intended by a designer. The electrostatic capacitance values are weighted by, for example, 2. The electrostatic capacitive elements Cto Care selected by, for example, the switches CSWto CSWbased on 4-bit frequency adjustment control signals SELCto SELC, thereby carrying out frequency switching.

Semiconductor integrated circuit device

A high-accuracy clock signal is generated even when the settings of the clock frequency are changed or there is a variation in power supply, temperature, or the like. A frequency-voltage conversion circuit includes a switch portion including switches, electrostatic capacitive elements, and other switches. The electrostatic capacitive elements have different absolute capacitance values, and are provided so as to cover a frequency range intended by a designer. For example, based on 4-bit frequency adjustment control signals, the other switches select the electrostatic capacitive elements having the electrostatic capacitance values thereof each weighted with 2 to perform the switching of a frequency.

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Kanagawa, Japan

Kosuke Yayama