Tdk Corporation

Kosuke Takano

Nobuto Morigasaki

Toshihiko Kaneko

Masahiro Yoshida

Mari Miyauchi

Makoto Maeda

Momoyo Sasaki

Takashi Kojima

Masakazu Hosono

Dan Sakurai

Tamotsu Ishiyama

Sanshiro Aman

Tomohisa Fukuoka

Masahide Ishizuya

Yuhta Matsunaga

Kenichi Kawabata

Kei Suzuki

Hisayuki Abe

Minoru Takaya

Hideaki Seki

Toshikazu Endo

Yasushi Kawashima

An electronic component includes an element body having a functional layer and an internal electrode layer, and an external electrode formed on a surface of the element body and connected to the internal electrode layer electrically. The chlorine concentration of the element body of the electronic component is 10 ppm or less.

Electronic component

A dielectric ceramic composition includes a main component of a perovskite type compound represented by a general formula of ABO, in which A is an element in an A-site, B is an element in a B-site, and O is an oxygen element. A includes Ba. A further includes at least one of Ca and Sr. B includes Ti. A sintered-body lattice volume obtained by X-ray diffraction method is 64.33 &#x212b;or below.

Dielectric ceramic composition, electronic device, and multilayer ceramic capacitor

A dielectric ceramic composition includes a main component of a perovskite type compound represented by a general formula of ABO, in which A is an element in an A-site, B is an element in a B-site, and O is an oxygen element. A includes Ba. B includes Ti and Zr. A sintered-body lattice volume obtained by X-ray diffraction method is 64.50 &#x212b;or above.

A dielectric ceramic composition comprises, a main component including barium titanate, a first subcomponent including MgO, a second subcomponent including sintering aids of SiOcompound, a third subcomponent including at least one of VO, NbOand WO, a fourth A subcomponent including Roxide (note that, Ris at least one selected from Tb, Gd and Dy), a fourth B subcomponent including Roxide (note that, Ris at least one selected from Ho, Y and Yb), and a fifth subcomponent including MnO or CrO.

Dielectric ceramic composition and an electronic component

A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RAO, RBO, RCO, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as '&#x3b1;', '&#x3b2;' and &#x201c;&#x3b3;&#x201d;, respectively, the &#x201c;&#x3b1;&#x201d;, &#x201c;&#x3b2;&#x201d; and &#x201c;&#x3b3;&#x201d; satisfy relations of 2.5&#x2266;(&#x3b1;/&#x3b2;)&#x2266;5.0 and 1.0&#x2266;(&#x3b2;/&#x3b3;)&#x2266;10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.

Dielectric ceramic composition and ceramic electronic component

A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RAO, RBO, RCO, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as '&#x3b1;', '&#x3b2;' and &#x201c;&#x3b3;&#x201d;, respectively, they satisfy relations of 1.2&#x2266;(&#x3b1;/&#x3b2;)&#x2266;5.0 and 0.5&#x2266;(&#x3b2;/&#x3b3;)&#x2266;10.0.

A dielectric ceramic composition comprises a main component including BaTiO, a first subcomponent including BaZrO, a second subcomponent including an oxide of Mg, a third subcomponent including an oxide of rare earth, a fourth subcomponent including an oxide of at least one element selected from Mn, Cr, Co and Fe, and a fifth subcomponent including an oxide of at least one element selected from Si, Al, Ge, B and Li. At least a part of dielectric particles constituting the dielectric ceramic composition comprises a surface diffusion structure comprised of a central layer and a diffusion layer therearound. CR and CRmax, respectively defined as a concentration of said 'R' in a proximity point to a boundary face of the dielectric particle and a maximum concentration of the 'R' in the diffusion layer, satisfy a relation of CRmax/CR&#x3e;1. Also, CM and CMmax, respectively defined as a concentration of said Mg in a proximity point to a boundary face of the dielectric particle and a maximum concentration of Mg in the diffusion layer, satisfy a relation of CMmax/CM&#x3e;1.

Dielectric ceramic composition and electronic device

The invention aims at providing a dielectric ceramic composition including BaTiOwhere 'm' satisfies 0.99&#x2266;m&#x2266;1.01 and BaZrOwhere 'n' satisfies 0.99&#x2266;n&#x2266;1.01, an oxide of Mg, an oxide of R where R is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, an oxide of at least one element selected from Mn, Cr, Co and Fe, and an oxide of at least one element selected from Si, Li, Al, Ge and B. 35 to 65 moles of BaZrO, 4 to 12 moles of an oxide of Mg, 4 to 15 moles of an oxide of R, 0.5 to 3 moles of an oxide of Mn, Cr, Co and Fe, and 3 to 9 moles of an oxide of Si, Li, Al, Ge and B are included therein per 100 moles of the BaTiO.

A module with embedded semiconductor IC of the present invention includes a first resin layer, a second resin layer, post electrodes passing through the first and second resin layers, and a semiconductor IC mounted as embedded between the first resin layer and the second resin layer. Stud bumps are formed on land electrodes of the semiconductor IC and positioned with respect to the post electrodes. Owing to this positioning of the stud bumps formed on the semiconductor IC with respect to the post electrodes, the planar position of the stud bumps is substantially fixed. As a result, it is possible to use a semiconductor IC having a very narrow electrode pitch of 100 &#x3bc;m or smaller, particularly of around 60 &#x3bc;m.

Growing community of inventors

Tokyo, Japan

Kosuke Takano