Kioxia Corporation

Toshiba Memory Corporation

Kosuke Takai

Mana Tanabe

Hideaki Sakurai

Kaori Umezawa

Noriko Sakurai

Kenji Masui

Yasuhito Yoshimizu

Takeshi Yamane

Shingo Kanamitsu

Minako Inukai

Takashi Kamo

Kyo Otsubo

Keiko Morishita

Yukio Oppata

According to one embodiment, a pattern forming method includes forming an organic film on a processing target material, the organic film comprising a convex part and a remaining film part adjacent to the convex part and thinner than the convex part. The method further includes irradiating the organic film with an electron beam to decrease a dry etching rate of the organic film. The method further includes removing the remaining film part by dry etching of the organic film. The method further includes forming a pattern on the processing target material by dry etching using the organic film from which the remaining film part has been removed as a mask.

Pattern forming method, combined processing apparatus, and recording medium

A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

Semiconductor device, template, and method of manufacturing template

A template according to the present embodiment is a template used in a lithography process of a semiconductor manufacturing process. A first substrate includes a first face, a second face protruded from a portion of the first face, and a lateral face being a lateral face positioned between the second face and the first face and inclined with respect to the second face at a connection portion to the second face. A first material film is provided at least on the lateral face.

Template, manufacturing method of template

A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

Substrate processing method and substrate processing apparatus

According to one embodiment, a processing apparatus for processing substrates having different base shapes includes a stage comprising a first portion having a substrate facing surface and an opening extending therethough connected to a source of a cooling fluid, and a second portion located outwardly of the first portion, a substrate support, having a substrate support surface thereon, extending over the second portion, a process fluid outlet overlying the first portion, and a driving unit coupled to one of the stage and the first portion, wherein the driving unit is configured to move at least one of the substrate support surface and the substrate facing surface such that the relative locations of the substrate support surface and the substrate facing surface of the stage are changeable based on the shape of a substrate to be processed in the apparatus.

Processing apparatus for processing substrates of different types

According to one embodiment, a pattern inspection method includes detecting a region of a photomask having a pattern that differs from a corresponding design, acquiring an exposure focus shift information including an exposure focus shift amount of a portion of a substrate corresponding to the detected region of the photomask. The exposure focus shift amount for the detected region is acquired from the exposure focus shift information, and then a pass/fail determination for the detected region is performed based on an estimated pattern to be formed on the substrate.

Pattern inspection method and photomask fabrication method

A method for manufacturing a photomask includes obtaining a substrate on which a halftone film, a light-shielding film, and a resist film are stacked, irradiating a first region of the resist film at a first dose and a second region of the resist film that surrounds the first region at a second dose greater than the first dose, developing the resist film in the first region to form a mask pattern while leaving the resist film in the second region to form a mask frame pattern, and then patterning the light-shielding film using the mask pattern formed in the resist film.

Method for producing photomask, method for producing semiconductor device, method for forming pattern, and photomask

An exposure mask includes a substrate, and a plurality of first films and a plurality of second films located alternately over each other over selected portions of the substrate. The exposure mask further includes a third film selectively located over the first and second films. At least one first pattern is located over the substrate and does not include any of the first, second or third films. At least one second pattern is located over the substrate and includes the first and second films and does not include the third film. At least one third pattern is located over the substrate and includes the first, second and third films.

Exposure mask and manufacturing method of same

According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted.

Substrate processing method, substrate processing apparatus, and composite processing apparatus

According to one embodiment, a substrate processing method includes supplying a liquid on a first face of a substrate, forming a solidified layer in which at least part of the liquid has been solidified by cooling the substrate down to be equal to or lower than a solidification point of the liquid, and melting the solidified layer. Forming the solidified layer, includes controlling a cooling parameter by monitoring an optical characteristic or acoustic wave characteristic of the solidified layer.

A reflection-type exposure mask includes a light reflector provided in a pattern on a substrate. The light reflector has a multilayer structure including first-type layers and second-type layers that are alternately stacked. The second-type layers have a refractive index higher at an extreme ultraviolet wavelength than a refractive index of the first-type layer at the extreme ultraviolet wavelength. A light transmitting medium is on a side surface of the light reflector.

Reflection-type exposure mask

An EUV mask according to an embodiment includes a substrate, a first line-shaped portion provided on the substrate, a second line-shaped portion provided on the substrate, a first sidewall disposed on a side surface of the first line-shaped portion, and a second sidewall disposed on a side surface of the second line-shaped portion. A first layer and a second layer are stacked in the first and second line-shaped portions. The first layer includes a first material. The second layer includes a second material. The first and second sidewalls include an oxide of the first material and cover a side surface of the first layer and a side surface of the second layer.

EUV mask and method for manufacturing same

A lithography mask production method includes (a) forming, in a reflection layer of a blank substrate, a reference pattern used as a reference in reflectivity measurement and a reflection pattern used for lithography; (b) measuring a reflectivity Rref of the reflection layer at the reference pattern and a reflectivity RLS of the reflection layer at the reflection pattern; and (c) determining an effective width of the reflection layer at the reflection pattern based on the reflectivity Rref and the reflectivity RLS.

Lithography mask production method and lithography mask production system

One embodiment of the present invention provides a light reflection type lithography mask including: a substrate; and a reflection layer. The reflection layer is formed on the substrate, and has a first pattern and a second pattern as viewed from above. The second pattern is located so as to be closest to one of one side and the other side of the first pattern in a first direction. A reflectivity at a portion corresponding to the first pattern is different from a reflectivity at a portion corresponding to the second pattern.

Growing community of inventors

Yokohama Kanagawa, Japan

Kosuke Takai