Tokyo Electron Limited

Osaka University

Kosuke Takahashi

Yu Wamura

Masahiko Kaminishi

Yu Sasaki

Jun Ogawa

Hiroaki Ikegawa

Fumiaki Hayase

Hiroko Sasaki

Heiji Watanabe

Takuji Hosoi

Takayoshi Shimura

Mitsuhiro Tachibana

Shuji Azumo

Yuichiro Morozumi

Kiichi Takahashi

Yusaku Kashiwagi

Katsushige Harada

Masato Koakutsu

Naohide Ito

Muneyuki Otani

Yuya Sasaki

Shinobu Kawamorita

Yosuke Matsumoto

Kenta Horigome

A monitoring apparatus for monitoring a raw material tank monitors the temperature of the raw material tank when the temperature of the raw material tank storing a solid or liquid raw material is raised to a set temperature by a heating unit. The monitoring apparatus includes: a temperature determination unit configured to determine whether the temperature has reached a stable range including the set temperature, and determine whether the temperature has deviated from the stable range; and a setting unit configured to set the set temperature of the heating unit to 0&#xb0; C. when a predetermined timeout time has elapsed from a time point at which the temperature determination unit determined that the temperature deviated from the stable range.

Monitoring apparatus of raw material tank and monitoring method of raw material tank

A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

Nozzle and substrate processing apparatus using same

A substrate processing apparatus includes a first hole portion formed through a sidewall of the process chamber and horizontally extending outward and a second hole portion formed to be contiguous with the first hole portion and defining a supply channel for a process gas. The apparatus also includes a gas nozzle, a plurality of seal members and an annular spacer. A proximal end of the gas nozzle is inserted into the first hole portion. The plurality of seal members is spaced apart from each other between an outer circumferential surface of the gas nozzle and the first hole portion. The annular spacer is inserted into the first hole portion and is pressed against an annular surface of an opening periphery of the second hole portion by the gas nozzle in a state where the proximal end of the gas nozzle is engaged with the annular spacer.

Substrate processing apparatus

A method of detoxifying an exhaust pipe in a film forming apparatus configured to supply a raw material gas contending a harmful component and a reaction gas capable of generating a harmless reaction product by reaction with the raw material gas into a process chamber to perform a film forming process on a substrate while independently exhausting the raw material gas and the reaction gas from a raw material exhaust pipe and a reaction gas exhaust pipe connected to the process chamber, respectively, is provided. The method includes supplying the reaction gas into the raw material exhaust pipe to detoxify an interior of the raw material exhaust pipe during a predetermined period in which the film forming apparatus is operated and the film forming process is not performed.

Method of detoxifying exhaust pipe and film forming apparatus

A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of a turntable at predetermined intervals in a circumferential direction, the turntable being provided in a processing chamber. Next, the turntable on which the plurality of substrates is placed is rotated. Then, a fluid is supplied to the surface of the turntable while rotating the turntable. Here, the fluid is supplied to an area between the plurality of substrate holding areas in response to an operation of changing a flow rate of the fluid.

Substrate processing method and substrate processing apparatus

Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Film forming method and film forming apparatus

A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Method of depositing a film using a turntable apparatus

A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

Film deposition method

A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Growing community of inventors

Iwate, Japan

Kosuke Takahashi