Nichia Corporation

Kosuke Sato

Keiji Emura

Kenji Ozeki

Yoshiyuki Aihara

Dai Wakamatsu

Atsushi Kojima

Chinami Nakai

Kimihiro Miyamoto

Takashi Ishii

Yoshitaka Sumitomo

Satoshi Kinoshita

Kazuya Nakao

A light emitting device and a light emitting module both having narrow spacing between emission faces, as well as a method of manufacturing light emitting device and a method of manufacturing light emitting module are provided. A light emitting deviceincludes element structure bodies, at least one of the element structure bodies including a submount substrate, a light emitting elementdisposed on the submount substrate, a light transmitting memberdisposed on the light emitting element, and a first cover membercovering the lateral faces of the light emitting elementon the submount substrate, and a second cover membersupporting the element structure bodiesby covering the lateral faces of the element structure bodies

Light emitting device, and light emitting module each having cover members on element structure bodies

A light emitting element includes: a semiconductor structure; first and second electrodes formed above the semiconductor structure. In a plan view: the first electrode consists of a first pad electrode configured to be bonded with a first conductive wire and electrically connected to a first external electrode or a first external terminal, a first extending portion extending from the first pad electrode, and two second extending portions extending from the first pad electrode, the second electrode consists of a second pad electrode configured to be bonded with a second conductive wire and electrically connected to a second external electrode or a second external terminal, and two third extending portions extending from the second pad electrode.

Light emitting element

A method for manufacturing a light-emitting module includes: providing a wiring substrate including: a base member having an upper surface, and a metal layer disposed on the upper surface of the base member; forming a resist layer on the wiring substrate such that the metal layer is exposed from the resist layer; disposing an intermediate body on the resist layer, the intermediate body comprising a light-emitting element and a covering layer; forming a bonding member; removing the resist layer and the covering layer; and forming a plating layer on a surface of the bonding member by plating, such that a portion of the plating layer is located between an electrode surface of the light-emitting element and the bonding member.

Light-emitting module and method for manufacturing light-emitting module

A light emitting element includes: a semiconductor structure; first and second electrodes formed above the semiconductor structure; and a protective film. In a plan view: the first electrode has a first connecting portion, a first extending portion, and two second extending portions, the second electrode has a second connecting portion, and two third extending portions, the first extending portion extends linearly in a direction from the first connecting portion toward the second connecting portion, the two second extending portions are located on opposite sides of the first extending portion, respectively, with each of the second extending portions having two bent portions and a linear portion extending parallel to the first extending portion and located between the two bent portions, and the two third extending portions are located between the first extending portion and the two second extending portions, respectively.

A light emitting element includes a semiconductor structure, and first and second electrodes. In a plan view, the first electrode has a first connecting portion, and a first extending portion and exactly two second extending portions. The second electrode has a second connecting portion, and exactly two third extending portions. The first extending portion extends linearly from the first electrode connecting portion toward the second electrode connecting portion. Each of the two third extending portions includes a bent portion, and a linear portion located between the first extending portion and a respective one of linear portions of the two second extending portions, and along an imaginary line that extends through the two second extending portions and the two third extending portions in a direction perpendicular to the direction in which the first extending portion extends, an entirety of the second electrode is located inward of the two second extending portions.

A method of manufacturing a light-emitting element including, in the following order, steps of: preparing a wafer on which a semiconductor layer including an light-emission layer is formed; forming a resist film comprising a main body and a protrusion; forming a first metal film; forming a second metal film on the resist film and on the first metal film; pulling the protrusion of the resist film upward by raising and then lowering a temperature of the wafer; forming a third metal film on the second metal film and covering an end of the first metal film by the third metal film; and removing the resist film. In the step of forming the second metal film, the end of the first metal film is exposed from the second metal film.

Manufacturing method of light-emitting element

A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions. The second electrode has a second connecting portion, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. The second extending portions extend beyond the second connecting portion. The first and second connecting portions are symmetrically arranged with respect to a virtual line parallel to one side of the light emitting element.

A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion configured to be bonded with a conductive wire, a first extending portion, and two second extending portions. The second electrode has a second connecting portion configured to be bonded with a conductive wire, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the two second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. Each of the second extending portions extends beyond a position of the second connecting portion.

A light emitting element has semiconductor layers and first and second electrodes disposed. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions, and the second electrode has a second connecting portion and two third extending portions. The first extending portion of the first electrode extends linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extend parallel to the first extending portion on two sides of the first extending portion. The second extending portions each has two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portion. With respect to an extending direction of the first extending portion, each of the second extending portions extends beyond a position of the second connecting portion.

A light emitting element has: first and second conductivity type semiconductor layers, first and second electrodes disposed on the same face side of the first and second conductivity type semiconductor layers, respectively. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions, and the second electrode has a second connecting portion and two third extending portions. The first extending portion of the first electrode extends linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extend parallel to the first extending portion on two sides of the first extending portion. The second extending portions each has two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the two second extending portions.

A light emitting element having; a first and a second conductivity type semiconductor layers, a first and a second electrodes formed on the first and second conductivity type semiconductor layer, the first and the second electrodes being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in plan view, the first electrode having a first connecting portion, a first extending portion, and two second extending portions, the second electrode having a second connecting portion and two third extending portions, the first extending portion of the first electrode extending linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extending parallel to the first extending portion on two sides of the first extending portion, the two third extending portions of the second electrode extending parallel to the first extending portion between the first extending portion and the two second extending portions.

A light emitting element includes a first conductivity-type semiconductor layer, a first electrode, a second conductivity-type semiconductor layer and a second electrode. The second conductivity-type semiconductor layer has a square peripheral shape. The first electrode includes a first connecting portion on a first diagonal line and a first extending portion extending from the first connecting portion onto the first diagonal line. The second electrode includes a second connecting portion on the first diagonal line facing the first connecting portion via the first extending portion. Two second extending portions extend from the second connecting portion and having a first portion and a second portion respectively. The first connecting portion includes an end portion closer to the second connecting portion than a straight line intersecting the tip ends of the two second extending portions, and a center portion at a side father from the second connecting portion than the second diagonal line.

Light emitting element including first electrode with first connecting portion and first extending portion, and second electrode with second connecting portion and two second extending portions

The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate.

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Anan, Japan

Kosuke Sato