Asahi Kasei Kabushiki Kaisha

Crystal Is, Inc.

Mitsubishi Electric Corporation

Tdk Corporation

Kosuke Sato

Leo J Schowalter

James R Grandusky

Shawn Robert Gibb

Craig Moe

Tomohiro Morishita

Motoaki Iwaya

Takashi Mori

Makoto Kurihara

Susumu Fujiwara

Tomohiko Hasegawa

Koichi Obara

Keisuke Oishi

Shinji Yasue

Hiroki Karisyuku

Tomonobu Izaki

Yuya Ogino

Shawn R Gibb

A lithium iron complex oxide is represented by LiFeO, two peaks with different quadrupole splitting values (QS) analyzed usingFe Mössbauer spectroscopy are shown, one of the two peaks, a peak A, satisfies QS>0, and the other one of the two peaks, a peak B, satisfies QS=0.

Lithium iron complex oxide, cathode material, cathode, and lithium-ion secondary battery

Provided is a nitride semiconductor element that does not cause element breakdown even when driven at high current density. A nitride semiconductor element includes an active layer, an electron block layer formed above the active layer, an AlGaN layer formed on the electron block layer, and a cover layer covering an upper surface of the AlGaN layer and formed of AlGaN or GaN having a lower Al composition ratio than in the AlGaN layer, in which the AlGaN layer includes protrusions provided on a surface opposite to the active layer, and the cover layer covers the protrusions. The AlGaN layer is preferably formed of AlGaN having an Al composition ratio decreasing in a direction away from the active layer, and the protrusions preferably have a frustum shape.

Nitride semiconductor element

An air-conditioning apparatus includes: a communication unit, a sensor, and a controller. The communication unit receives a radio signal from a portable terminal The sensor detects detailed information including information indicating presence or absence of a person in a detection target region that is a target region for detection of whether a person is present or not. The controller causes, when the communication unit receives a radio signal having a radio field intensity higher than or equal to a predetermined radio field intensity and a detection process by the sensor to detect the detailed information is in a stopped state, the sensor to start the detection process to detect the detailed information and control an air-conditioning operation based on the detailed information detected by the sensor.

Air-conditioning apparatus

This invention provides a nitride semiconductor light emitting device in which current concentration is suppressed without excessively increasing resistance at a low cost without increasing a manufacturing process. The planar shape of a mesa portion configuring a nitride semiconductor light emitting device is a shape containing a convex-shaped tip portionformed by a curved line or a plurality of straight lines and abase portioncontinuous to the convex-shaped tip portion, in which an obtuse angle is formed by adjacent two straight lines in the convex-shaped tip portion formed by the plurality of straight lines. The first electrode layerhas visible outlinesandalong a visible outlineof the mesa portion through a gapin planar view. The relationship between a gap W1 in the convex-shaped tip portionand a gap W2 in the base portionis W1&#x3e;W2.

Nitride semiconductor light emitting device, ultraviolet light emitting module

A refrigeration cycle apparatus includes an expansion device, a pipe, and a transmission sound suppressing member. The expansion device includes a valve body to control a flow rate of refrigerant. The pipe is connected to the expansion device to extend along moving directions, in controlling the flow rate of the refrigerant, of the valve body of the expansion device, and allowing the refrigerant to pass therethrough. The transmissive sound suppressing member is positioned at a first region, which is defined on an outer side of the pipe to cover at least a tip of the valve body of the expansion device, and a second region, which is continuous to the first region and is defined on an outer side of a portion of the pipe including a portion of connection to the expansion device.

Refrigeration cycle apparatus and electric apparatus including the refrigeration cycle apparatus

This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlGaN and a composition change layer made above the nitride semiconductor active layer and made of AlGaN in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer. The composition change layer has a first composition change region having a thickness larger than 0 nm and smaller than 400 nm and a second composition change region which is a region further away from the nitride semiconductor active layer than the first composition change region and in which the change rate of the Al composition ratio x3 in the thickness direction of the film thickness of the composition change layer is higher than that of the first composition change region, in which, in the first composition change region, the Al composition ratio continuously changes in the thickness direction of the film thickness.

There is provided an apparatus including a semiconductor light emitting device formed on a surface of a substrate including a first electrode and a plurality of second electrodes formed adjacent to the first electrode in planar view, a base including an opposite surface facing the surface of the substrate, wherein a third electrode corresponding to the first electrode in positional relationship and a fourth electrode corresponding to the plurality of second electrodes in positional relationship are formed on the opposite surface, first connecting bodies electrically connecting the first electrode with the third electrode, and a second connecting body electrically connecting the plurality of second electrodes with the fourth electrode. The plurality of second electrodes () have a belt-like planer shape and centerlines respectively bisecting widths of the plurality of second electrodes are substantially parallel in planar view. An even number of the first connecting bodies () are disposed substantially line symmetrically about each of extended lines of the centerlines respectively bisecting the widths of the plurality of second electrodes in planar view.

Semiconductor light emitting apparatus and ultraviolet light emitting module

This invention provides a nitride semiconductor light emitting device in which current concentration is suppressed without excessively increasing resistance at a low cost without increasing a manufacturing process. The planar shape of a mesa portion configuring a nitride semiconductor light emitting device is a shape containing a convex-shaped tip portionformed by a curved line or a plurality of straight lines and a base portioncontinuous to the convex-shaped tip portion, in which an obtuse angle is formed by adjacent two straight lines in the convex-shaped tip portion formed by the plurality of straight lines. The first electrode layerhas visible outlinesandalong a visible outlineof the mesa portion through a gapin planar view. The relationship between a gap Win the convex-shaped tip portionand a gap Win the base portionis W&#x3e; W

A nitride semiconductor light emitting element includes a first nitride semiconductor layer of a first conductivity type, nitride semiconductor stacked bodies each of which is formed on a portion of the first nitride semiconductor layer and includes a nitride semiconductor light emitting layer and a second nitride semiconductor layer of a second conductivity type, first electrodes formed on the first nitride semiconductor layer, and second electrodes each of which is formed on the second nitride semiconductor layers of the nitride semiconductor stacked bodies. The first and the second electrodes extend in a first direction. The first and the second electrodes are arranged in parallel with one another with gaps interposed therebetween in a second direction perpendicular to the first direction in plan view. A dimension of first electrodes sandwiched by second electrodes is greater than a dimension of first electrodes not sandwiched by second electrodes in the second direction.

Nitride semiconductor light emitting element and nitride semiconductor light emitting device

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Growing community of inventors

Tokyo, Japan

Kosuke Sato