Murata Manufacturing Co., Ltd.

Senju Metal Industry Co., Ltd.

Kosuke Nakano

Hidekiyo Takaoka

Hideki Otsuka

Shogo Kanbe

Yukihiro Fujita

Satoshi Ishino

Kenichi Kawasaki

Akihiro Nomura

Yutaka Ota

Yoshihiro Kawaguchi

Noboru Kato

Minoru Ueshima

Shizuharu Watanabe

Nobuaki Ogawa

Hideo Nakagoshi

Yoichi Takagi

Shunsuke Chisaka

Hiroshi Somada

Ko Inaba

Wataru Yanase

Masahiro Andatsu

Masafumi Seino

A chip electronic component includes spacers that each have a predetermined thickness direction dimension on a mounting surface in a direction perpendicular to the mounting surface. The spacers each contain, as a main component, an intermetallic compound containing at least one high-melting-point metal selected from Cu and Ni, and Sn defining a low-melting-point metal.

Chip electronic component

A multilayer ceramic electronic component includes a laminate including external electrodes connected to a pair of metal terminals through a bonding material. Each of the pair of metal terminals includes a terminal body, an extension portion, and a mounting portion. The terminal body includes side-surface ribs, opposed to the side surfaces of the electronic component body. The bonding material is provided between the side-surface ribs and the external electrode opposed to the side-surface rib and is not provided between the terminal body and the end surface center portion of the external electrode.

Multilayer ceramic electronic component

A repair method that includes covering a damaged part of a member to be repaired with a repair material, and heating the repair material to a predetermined temperature to form an alloy layer. At least the surface of the member to be repaired is a first metal such as Cu. The repair material includes a second metal such as Sn. By the heating, the surface of the member to be repaired is integrally joined with a layer of an intermetallic compound and an alloy having a melting point higher than a melting point of either of the first metal or the second metal.

Repair method and repair material

A first structural material is bonded to a second structural material with a joining material provided with a mixed layer of a raw-material component for forming an intermetallic compound layer and a resin component that softens and flows during heat treatment interposed therebetween to form bonded structural materials. When the bonded structural materials are heat-treated, the first structural material is joined to the second structural material with an intermetallic compound layer, and the resin component exudes and covers the lateral circumferential (exposed) portion of the intermetallic compound layer with a resin film.

Method for joining structural material, joining sheet, and joint structure

A conductive material that includes a metal component consisting of a first metal and a second metal having a melting point higher than that of the first metal, wherein the first metal is Sn or an alloy containing 70% by weight or more of Sn, and the second metal is a metal or alloy which forms an intermetallic compound having a melting point of 310&#xb0; C. or higher with the first metal and has a lattice constant difference of 50% or greater between itself and the intermetallic compound generated at the circumference of the second metal.

Conductive material, bonding method using the same, and bonded structure

A solder paste including a metal component consisting of a first metal powder and a second metal powder having a melting point higher than that of the first metal, and a flux component. The first metal is Sn or an alloy containing Sn, the second metal is one of (1) a Cu&#x2014;Mn alloy in which a ratio of Mn to the second metal is 5 to 30% by weight and (2) a Cu&#x2014;Ni alloy in which a ratio of Ni to the second metal is 5 to 20% by weight, and a ratio of the second metal to the metal component is 36.9% by volume or greater.

Solder paste, joining method using the same and joined structure

An electronic part including an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu&#x2014;Ni alloy layer and a Cu&#x2014;Mn alloy layer, and an antioxidant film formed on the outer side of the alloy layer. The antioxidant film is one of a Sn-containing film, a noble metal film, and an organic substance film.

Electronic part and method for forming joint structure of electronic part and joining object

A joint structure that includes a first metal member, a second metal member, and a joint portion sandwiched between the first metal member and the second metal member. At least a Cu-M-Sn intermetallic compound is dispersed in the joint portion, M is at least one of Ni and Mn, and neither a CuSn layer nor a CuSnlayer is present on at least one of interfaces between the joint portion and the first metal member and the second metal member.

Joining method, joint structure, electronic device, method for manufacturing electronic device and electronic part

An electronic part that includes an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu&#x2014;Ni alloy layer and a Cu&#x2014;Mn alloy layer, and a Sn-containing layer on the outer side of the alloy layer. The Sn-containing layer is the outermost layer of the external electrode. The Sn-containing layer is in contact with the alloy layer.

Electronic part

In joining a first metal member composed of a first metal to a second metal member composed of a second metal with a joining material interposed therebetween, the joining material including a low melting point metal having a lower melting point than the first metal and/or the second metal, the low melting point metal composing the joining material is Sn or an alloy containing Sn, at least one of the first metal and the second metal is a metal or an alloy which forms an intermetallic compound with the low melting point metal composing the joining material, and heat treatment is performed at a temperature at which the low melting point metal melts in a state of locating the joining material between the first metal member and the second metal member.

Joining method, method for producing electronic device and electronic part

A first joining object and a second joining object are joined to each other using an insert material. The first joining object and/or the second joining object has a first metal composed of Sn or an alloy containing Sn. The insert material contains, as a main component, a second metal which is an alloy containing at least one selected from among Ni, Mn, Al and Cr, and Cu, and is located between the first joining object and the second joining object. When subjected to heat treatment to produce an intermetallic compound of the first metal and the second metal, the first joining object and the second joining object are joined to each other.

Joining method, joint structure and method for producing the same

A method of joining a first metal member having at least a surface made of a first metal to a second metal member having at least a surface made of a second metal with a joining material sandwiched therebetween. The joining material includes a low melting point metal having a lower melting point than the first metal and/or the second metal. The low melting point metal composing the joining material is Sn or an alloy containing Sn. At least one of the first metal and the second metal is a metal or an alloy which forms an intermetallic compound with the low melting point metal, and which has a lattice constant difference of 50% or more from the intermetallic compound. The joining material located between the first metal member and the second metal member is heat-treated at a temperature at which the low melting point metal is melted.

The present invention provides a multilayer circuit board that includes a plurality of resin layers, conductive wiring layers, and via-hole conductors. Each of the resin layers includes a resin sheet containing a resin and a conductive wiring layer disposed on at least one surface of the resin sheet. The via-hole conductors contain an intermetallic compound having a melting point of 300&#xb0; C. or more produced by a reaction between a first metal composed of Sn or an alloy containing 70% by weight or more Sn and a second metal composed of a Cu&#x2014;Ni alloy or a Cu&#x2014;Mn alloy. The second metal has a higher melting point than the first metal.

Growing community of inventors

Nagaokakyo, Japan

Kosuke Nakano