Nitto-denko Corporation

Kosuke Morita

Naohide Takamoto

Eiji Toyoda

Goji Shiga

Hiroyuki Senzai

Chie Iino

Takashi Oda

Takeshi Matsumura

Jun Ishii

Shigeki Muta

Kiichiro Matsushita

Takafumi Hida

Shuuhei Yamamoto

Tsuyoshi Ishizaka

Kazuhiro Kitayama

Provided is a sealing method that uses a photo-curable sealant sheet. The sealing method provided comprises, in the following order, a step of obtaining a photo-curable sealant sheet, a step of subjecting the sealant sheet to photoirradiation, and a step of applying the sealant sheet to a target object.

Sealing method

Provided is a sealant sheet formed in a sheet shape. The sealant sheet comprises an epoxy group-containing polysulfide polymer (AB) having two or more epoxy groups per molecule, and a thiol compound (C) having two or more thiol groups per molecule. In the sealant sheet, sulfur atoms in organic components of the sealant sheet has a weight fraction of 32.0% or higher and 36.0% or lower.

Sealant sheet

Provided is a sealant sheet formed as a sheet. The sealant sheet comprises an epoxy group-containing polysulfide. The epoxy group-containing polysulfide has a disulfide structure and an epoxy group in its molecule.

A sealing sheet with separators on both surfaces is provided with a sealing sheet, a separator (A) stacked on one surface of the sealing sheet and having a thickness of 50 &#x3bc;m or more, and a separator (B) stacked on the other surface of the sealing sheet.

Sealing sheet with separators on both surfaces, and method for manufacturing semiconductor device

Provided is a thermosetting sheet for sealing which is used to seal an electronic device. One surface of the sheet has a surface roughness (Ra) of 3 &#x3bc;m or less before the sheet is cured.

Sheet for sealing and method for manufacturing semiconductor device using said sheet for sealing

The present invention provides a thermally curable resin sheet for sealing a semiconductor chip having excellent reliability and storability while being reduced in warpage deformation due to the volume shrinkage of the thermally curable resin sheet, and a method for manufacturing a semiconductor package. The present invention relates to a thermally curable resin sheet for sealing a semiconductor chip, wherein an activation energy (Ea) satisfies the following formula (1), a glass transition temperature of a product thermally cured at 150&#xb0; C. for 1 hour is 125&#xb0; C. or higher, and a thermal expansion coefficient &#x3b1; [ppm/K] of the thermally cured product at the glass transition temperature or lower and a storage modulus E' [GPa] at 25&#xb0; C. of the thermally cured product satisfy the following formula (2):30&#x2266;&#x2266;120 [kJ/mol]&#x2003;&#x2003;(1); and10,000&#x2266;&#x3b1;&#xd7;&#x2032;&#x2266;300,000 [Pa/K]&#x2003;&#x2003;(2).

Thermally curable resin sheet for sealing semiconductor chip, and method for manufacturing semiconductor package

Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa&#xb7;s or less at 60 to 100&#xb0; C.

Reinforcing sheet and method for producing secondary mounted semiconductor device

The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E' [MPa] and a thermal expansion coefficient &#x3b1; [ppm/K] after carrying out a heat-curing treatment at 175&#xb0; C. for an hour satisfy the following formula (1) at 25&#xb0; C.:&#x2032;&#xd7;&#x3b1;&#x3c;250000 [Pa/K]&#x2003;&#x2003;(1).

Under-fill material and method for producing semiconductor device

A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided. The method comprises: preparing a semiconductor chip having a first main surface on which an electroconductive member is formed; preparing a supporting structure in which, over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order; arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to a second main surface of the semiconductor chips opposite to the first main surface; laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips; and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer from the first thermosetting resin layer.

Growing community of inventors

Ibaraki, Japan

Kosuke Morita