Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Tokyo Electric Limited

Techno Quartz Inc.

Kosuke Imafuku

Yukio Naito

Shosuke Endo

Kazuya Nagaseki

Keizo Hirose

Kazuhiro Tahara

Akira Koshiishi

Masayuki Tomoyasu

Hiroshi Nishikawa

Yoshio Sakamoto

Mitsuaki Komino

Hiroto Takenaka

Yoshio Fukasawa

Hiroshi Tsuchiya

Daisuke Hayashi

Jun Ooyabu

Ryo Nonaka

Toshifumi Nagaiwa

Kazuo Fukasawa

Yasuhiro Umetsu

Isao Kobayashi

Kenji Momose

Shuji Mochizuki

Masahide Kato

Katsutoshi Hoshino

Takao Sakamoto

Shuei Sekizawa

A silicon focus ring in a processing chamber of a plasma etching apparatus is provided. The silicon focus ring comprises: silicon wastes an amount of which is determined based on a content of impurity in the silicon wastes and a target value of an electrical resistance of the silicon focus ring; a silicon source material an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring; and impurity an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring. The target value of the electrical resistance of the silicon focus ring is about 2&#x3a9;.

Silicon focus ring

A silicon component in a processing chamber for performing an etching process on a substrate is provided. The silicon component contains recycled silicon obtained by a silicon component recycling method including: collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity into a crucible; and manufacturing the final product using the silicon ingot.

Silicon component for plasma etching apparatus

A method is provided of refurbishing a quartz glass component which has been contaminated and eroded due to continuous use in a plasma process apparatus for semiconductor manufacturing. In the method, a surface deposit on the quartz glass component is removed by an appropriate cleaning method which is determined depending on the contamination status, and presence or absence of residual deposit on the cleaned component is carefully inspected through irradiating with light of a predetermined wavelength to cause fluorescence effect. Then the eroded portion of the quartz glass component is restored to the original state by flame treatment and precision machining. As a result, the refurbishment method can increase the mechanical strength of the quartz glass component, enhance the productivity and yield ratio through efficient use of the remaining materials of the quartz glass.

Method of refurbishing a quartz glass component

A method of recycling a silicon component for a plasma etching apparatus includes a collecting process of collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; a measurement process of obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; an input amount determination process of determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; and a silicon ingot manufacturing process of manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity based on the input amounts determined in the input amount determination process into a crucible.

Method of recycling silicon component for plasma etching apparatus and silicon component for plasma etching apparatus

A gas removal system that removes a halogen gas remaining inside a processing chamber after executing a specific type of processing inside the processing chamber maintained in an airtight state with plasma obtained through discharge dissociation of the halogen gas supplied from a gas supply device comprises a pressure control device that controls the pressure inside the processing chamber, an air supply device that supplies the atmospheric air into the processing chamber after the pressure inside the processing chamber is lowered by the pressure control device, a control device that controls the air supply device and an evacuation device that evacuates a gas produced through a reaction of the halogen gas and the atmospheric air having occurred inside the processing chamber.

Method and system for removal of gas and plasma processing apparatus

A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.

Worktable device and plasma processing apparatus for semiconductor process

An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

Plasma treatment method and apparatus

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f,lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f,higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Plasma treatment method utilizing an amplitude-modulated high frequency

A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

Plasma processing apparatus

Gas diffusion plate for electrode of semiconductor wafer processing

A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.

Plasma processing method and plasma etching method

A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.1, to pass through it but to cut off radio frequency voltage, which has the second frequency f.sub.2, while plasma is being generated.

Growing community of inventors

Nirasaki, Japan

Kosuke Imafuku