Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Kosuke Hareyama

Hiroyuki Shigeta

Daisuke Chino

Hirotaka Kobayashi

Hirokazu Nakayama

Tsuyoshi Watanabe

Christopher James Wright

Hirohisa Yasukawa

Mitsuhito Kanatake

Hitoshi Shibue

Bernadette Elliott-bowman

Kiyohisa Sakai

Atsushi Tsukada

Timothy Beard

Yutaka Ootaki

Shigekazu Ishii

Matthew Lawrenson

Yuuji Nishitani

Ninao Sato

Yuki Yamane

Koyo Hosokawa

Provided is a thermoelectric power generation module that includes a heat-dissipating body that dissipates heat generated by a heat-generating body, a thermoelectric power generation element disposed at an approximately central section of a top surface of the heat-dissipating body, and a thermally-responsive body that is disposed on an outer peripheral section of the top surface of the heat-dissipating body and whose thermal resistance changes according to temperature. The thermoelectric power generation element and the thermally-responsive body are disposed on a bottom surface of the heat-generating body, and the thermally-responsive body is formed such that the thermal resistance of the thermally-responsive body becomes larger than that for the thermoelectric power generation element when the heat-generating body has a low temperature and that the thermal resistance of the thermally-responsive body becomes equal to or smaller than that for the thermoelectric power generation element when the heat-generating body has a high temperature.

Thermoelectric power generation module and method of manufacturing thermoelectric power generation module

An improvement in heat radiation efficiency is achieved. A semiconductor device according to the present technology includes a substrate portion on which a semiconductor chip is mounted and in which an external connection terminal for performing electrical connection to the outside is formed on a rear surface on a side opposite to a front surface which is a surface on a side where the semiconductor chip is mounted, an outer wall portion that protrudes toward the front surface side in an outer circumferential portion of the substrate portion, a lid portion which is supported by the outer wall portion and covers the semiconductor chip, and a heat storage member which is disposed at a position further inside than the outer wall portion between the rear surface of the substrate portion and a rear surface of the lid portion.

Semiconductor device, imaging device, and method of manufacturing semiconductor device

A semiconductor device includes a semiconductor chip, a circuit board, a heat releasing plate, an adhesive member, and a conductive member. The circuit board transmits a signal of the semiconductor chip. The heat releasing plate has the semiconductor chip disposed thereon, and has an opening in a region on the outer side of a semiconductor chip placement region that is a region in which the semiconductor chip is disposed. The adhesive member is disposed in a region on the outer side of the opening on a different surface of the heat releasing plate from the surface on which the semiconductor chip is disposed, and bonds the circuit board and the heat releasing plate to each other. The conductive member connects the semiconductor chip and the circuit board to each other via the opening.

Semiconductor device, imaging apparatus, and method for manufacturing semiconductor device

The present technology relates to a solid-state imaging device capable of preventing defects in the appearance thereof, a camera module, and an electronic apparatus. The solid-state imaging device to be provided includes: a semiconductor substrate having pixels formed therein, the pixels each including a photoelectric conversion element; and on-chip lenses formed above the semiconductor substrate, the on-chip lenses corresponding to the pixels. The area in which the on-chip lenses are formed is extended to a peripheral area outside an imaging area formed with the pixels. The present technology can be applied to solid-state imaging devices, such as CMOS image sensors.

Solid-state imaging device, camera module, and electronic apparatus

A semiconductor device including a plurality of solder balls on a surface the semiconductor device, and a retaining body associated with a first solder ball of the plurality of solder balls, separating the first solder ball from at least a second solder ball of the plurality of solder balls. The retaining body includes a conductive portion and an insulating portion configured to cover the conductive portion. Also, a method of manufacturing a semiconductor device, including acts of forming a plurality of retaining bodies on a surface of a wiring substrate, each retaining body comprising a conductive portion and an insulating portion covering the conductive portion, each retaining body forming an opening section, and forming a solder ball in the opening section formed by each of the retaining bodies.

Semiconductor device and method of manufacturing semiconductor device

A wiring board that includes: insulation layers and wiring layers which are laminated alternately; a component connection pad present on one surface of the wiring board in a lamination direction of the insulation layers and the wiring layers, and to which an electronic component is connected; a circuit connection pad present on another surface of the wiring board in the lamination direction and is connected to a circuit board; and a structure which includes a coaxial structure, wherein each of the wiring layers is connected by a via, and the coaxial structure includes an inner wiring part extending in the lamination direction and an outer wiring part located on a side corresponding to an outer peripheral surface of the inner wiring part through an insulating resin, and the inner wiring part is electrically connected to the component connection pad and the circuit connection pad.

Wiring board and method of manufacturing wiring board

The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device capable of realizing impedance control of the semiconductor device. An input/output wiring lineand a ground wiring lineare such that through glass vias are provided so as to form a strip line structure by blasting or electric discharge machining and thereafter metal films are formed on a surface and a rear surface. It is possible to configure the semiconductor device with the impedance control by adjusting a conductor diameter of the input/output wiring lineand an insulating layer thickness between the input/output wiring lineand the ground wiring line. The present technology may be applied to the semiconductor device.

Semiconductor device capable of realizing impedance control and method of manufacturing the same

Growing community of inventors

Kanagawa, Japan

Kosuke Hareyama