Canon Kabushiki Kaisha

Kosuke Asano

Hideki Ina

Yasushi Kaneda

Takehiro Toyoda

Taisuke Isano

Akira Okita

Hiroaki Kobayashi

Ryota Sekiguchi

Koichiro Iwata

Yasushi Koyama

Taro Kato

Takeru Ohya

Takehito Okabe

Masaki Kurihara

Seiichirou Sakai

Ryo Yoshida

Takafumi Miki

Junya Tamaki

Alexis Debray

Atsushi Kanome

Satoshi Yokoyama

Kouki Miyano

Atsushi Kemmochi

A semiconductor device includes a plurality of wirings each having a damascene structure on a semiconductor layer, wherein the plurality of wirings includes a first wiring and a second wiring adjacent to each other, wherein the first wiring includes, along a direction in which the first wiring extends, a first portion, a second portion, and a third portion located between the first portion and the second portion, and wherein a width of the third portion is larger than each of a width of the first portion and a width of the second portion.

Semiconductor device and method for manufacturing semiconductor device

An inspection apparatus inspecting a wafer on which a plurality of patterns are formed by a plurality of exposure shots, the inspection apparatus comprising: acquisition unit configured to acquire first information representing a positional relation between an inspection mark included in a pattern formed by a first exposure shot and an inspection mark included in a pattern formed by a second exposure shot, and second information representing a positional relation between the inspection mark included in the pattern formed by the second exposure shot and an inspection mark included in a pattern formed by a third exposure shot; and derivation unit configured to derive a linear component of an error caused by a reticle, and a linear component of an error caused by a position of a wafer, on the basis of the first information and the second information.

Inspection apparatus and manufacturing method for semiconductor device

A method of manufacturing a semiconductor device by using an exposure apparatus having a reticle stage and a projection optical system includes a first period in which substrates are exposed by using a first reticle arranged on the reticle stage, a second period in which substrates are exposed by using a second reticle arranged on the reticle stage, and a third period which is between the first and second periods. The method includes changing, in at least part of the third period, the first reticle arranged on the reticle stage to the second reticle, and performing control, in the first and second periods, to adjust temperature distribution of an optical element of the projection optical system so as to reduce change in aberration of the projection optical system. The third period is shorter than the first period.

Method of manufacturing semiconductor device

An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter

A calculating method for calculating structural data of a two-level diffractive optical element configured to form a set of light intensity distributions point-symmetrical with respect to an axis on an image plane utilizing an iterative Fourier transform algorithm executed by a computer includes calculating a light intensity distribution and a phase distribution of a plane of the two-level diffractive optical element which has a Fourier transform relationship with the image plane by performing an inverse Fourier transform for a light intensity that is made by removing one of the set of light intensity distributions from the set of light intensity distributions, and calculating structural data of the diffractive optical element based upon the light intensity distribution and the phase distribution which have been calculated.

Calculating method of structural data of diffractive optical element, program, and manufacturing method

Provided is a semiconductor device including: a semiconductor element arranged on a substrate and having two electrodes; a conductive strip in contact with one of the two electrodes; and a dielectric arranged between another one of the two electrodes and the conductive strip, in which the conductive strip has an opening formed therein, the dielectric has a void formed therein, and the opening and the void are connected to each other.

Semiconductor device comprising a semiconductor element having two electrodes

A method for manufacturing a three-dimensional structure includes forming a first structure having a relief pattern on a substrate, forming a sacrifice layer on the first structure such that the sacrifice layer can be filled in a concave part of the first structure and the sacrifice layer can cover a surface of a convex part of the first structure on a side opposite to the substrate, forming a second structure having a relief pattern on the sacrifice layer, and a fourth step of removing the sacrifice layer from between the first structure and the second structure, and thereby bringing the second structure into contact with the surface of the first structure.

Manufacturing method of three-dimensional structure

A polarizer of the present invention having a higher level of polarization performance for a light in the deep ultraviolet wavelength range includes: a substrate transparent to deep ultraviolet light; and a periodic structure including a plurality of structural elements at predetermined intervals on the substrate, the polarizer being configured so that the deep ultraviolet light incident thereon is split into a light component reflected by the periodic structure and a light component passing between the structural elements adjacent to each other, and the periodic structure being composed of chromium oxide or tungsten.

Polarizer

Growing community of inventors

Utsunomiya, Japan

Kosuke Asano