Kabushiki Kaisha Toshiba

Kosoku Nagata

Toshio Shimizu

Hiroshi Komorita

Yutaka Ishiwata

Kouji Araki

Hiroshi Fukuyoshi

Hiroyuki Hiramoto

Yasuhiko Taniguchi

An insulating substrate () has insulative ceramic layers () laid one upon another, an intermediate layer () made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer () joined to the top surface of a top one of the ceramic layers, and a second conductive layer () joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.

Insulating substrate, manufacturing method thereof, and module semiconductor device with insulating substrate

An insulating substrate ( ) has insulative ceramic layers ( ) laid one upon another, an intermediate layer ( ) made of a material that is different from a material of the ceramic layers and arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, a first conductive layer ( ) joined to the top surface of a top one of the ceramic layers, and a second conductive layer ( ) joined to the bottom surface of a bottom one of the ceramic layers. Even if any one of the ceramic layers has strength lower than design strength and causes a breakage due to, for example, thermal stress, the remaining ceramic layers are sound to secure a specified breakdown voltage for the insulating substrate.

Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer

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Tokyo, Japan

Kosoku Nagata