University of California

Basf Se Corporation

University of Southern California

Aneeve LLC

Kosmas Galatsis

Kang L Wang

Pedram Khalili Amiri

Bo Wang

Omar M Yaghi

Hiroyasu Furukawa

Alexander U Czaja

Chongwu Zhou

Alexander Khitun

Igor V Roshchin

Pochiang Chen

Mingqiang Bao

Yue Fu

The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer includes a source electrode and a drain electrode, and printing a film including carbon nanotubes between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and drain electrode. In certain aspects, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode. In certain aspects, a transistor device is also provided.

Fully-printed carbon nanotube thin film transistor circuits for organic light emitting diode

Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MERAM)

A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.

Frequency mixer having ferromagnetic film

Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MeRAM)

The disclosure provides sensor for gas sensing including COgas sensors comprising a porous framework sensing area for binding an analyte gas.

Gas sensor incorporating a porous framework

Growing community of inventors

Torrance, CA, United States of America

Kosmas Galatsis